Preparation and characterization of ZnS thin films prepared by chemical bath deposition

Wei, Aixiang; Li, Jun; Zhuang, Mixue; Zhao, Yu

doi:10.1016/j.mssp.2013.03.016

Cited by 72 publications

(49 citation statements)

References 27 publications

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“…The decrease of the band gap is related to the increase of ZnS crystallite size. Our results are consistent with the reported CBD ZnS optical band gap values ranging from 3.62 to 3.93 eV[14][15][16][17]21].Fig.7 illustrates the room temperature PL spectra of the CBD ZnS single layer thin films deposited for different durations. The spectra show that the PL intensity is dependent on deposition time.…”

supporting

confidence: 90%

“…Various methods have been used to prepare ZnS thin films, such as magnetron sputtering [6], plasma-assisted metalorganic chemical vapor deposition [7], chemical bath deposition (CBD) [1][2][3][4][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22], electro-deposition [23] and pulsed-laser deposition [24]. Among these methods, the CBD technique is usually employed because it is very simple, cost effective, reproducible and can be used to deposit large area at moderate temperature.…”

Section: Introductionmentioning

confidence: 99%

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Effects of deposition time in chemically deposited ZnS films in acidic solution

et al. 2015

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supporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Effects of deposition time in chemically deposited ZnS films in acidic solution

et al. 2015

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“…Although there are many reports on the deposition of ZnS thin films by CBD, most show the deposition of either amorphous ZnS or a mixture of ZnS and ZnO [37,38]. Long et al [39] reported an improved method for deposition of ZnS thin films by CBD on pre-heated substrates.…”

Section: Introductionmentioning

confidence: 99%

Optimising conditions for the growth of nanocrystalline ZnS thin films from acidic chemical baths

Akhtar

Malik

Riaz

et al. 2015

Materials Science in Semiconductor Processing

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“…(aq) [7] The total ammonia concentration ([NH 3 ] total ) is the input variable while the free ammonia concentration ([NH 3 ]) is the output variable. All the other variables in Equation 7 are written as a function of the zinc ion concentration, the ammonia concentration, and the hydrogen ion concentration as given below in Equations 8-12.…”

Section: Sc(n Hmentioning

confidence: 99%

Quantitative Study on the Chemical Solution Deposition of Zinc Oxysulfide

Reinisch¹,

Perkins²,

Steirer³

2015

ECS J. Solid State Sci. Technol.

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Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wideband-gap semiconductor with performance advantages over CdS (E g = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell. Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (E A ) of ZnOS are calculated for different flow rates and solution compositions. The measured E A relationships are affected by changes in the primary growth mechanism when DMSO is included. Solution deposition of semiconductors and in particular chemical bath deposition (CBD) has gained attention in recent years due to its inexpensive, high quality films deposited at moderate temperatures. CBD is well suited for producing large-area thin films for solar cell applications.1,2 It has already demonstrated the potential to produce high efficiency thin-film solar cells (TFSCs) and modules 3 and is currently used to deposit buffer layers for various photovoltaic devices, including lab scale CdTe and commercialized copper indium gallium diselenide (CIGS) solar cells, which are technologies for clean, renewable, secure, and inexpensive energy production.Buffer layers in TFSCs typically serve as the first n-type layer in a heterojunction with a p-type absorber layer (CIGS, CdTe, etc.). In addition to transporting photogenerated charge, the buffer layer should allow maximum light to be transmitted to the absorber layer. Currently, most high efficiency TFSCs contain CdS buffer layers that are easy to deposit due to the low solubility product constant (K sp ) of CdS and the large difference between its K sp and competing species such as Cd(OH) 2 . However, the performance of CdS buffer layers is limited by its bandgap (E g = 2.4 eV), which absorbs blue as well as UV light. Also, the toxicity of CdS and its precursors poses risks and waste associated costs. 3 To counter these problems, alternative buffer layer materials have been researched in the last decades. One such material is ZnO x S 1-x , herein ZnOS. ZnOS is a non-toxic semiconductor, which experimentally has demonstrated a tunable bandgap between 2.6 eV and 3.6 eV. 4 Although ZnOS has been studied extensively, there is seemingly conflicting reports on its growth mechanism in CBD. Using an open bath, quartz crystal microbalance (QCM) approach, Hubert et al. hypothesized that ZnOS is formed by the heterogeneous ion-by-ion process because of its similarities to the chemical reaction controlled CdS growth.3 On the other hand, kinetic studies by...

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Preparation and characterization of ZnS thin films prepared by chemical bath deposition

Cited by 72 publications

References 27 publications

Effects of deposition time in chemically deposited ZnS films in acidic solution

Effects of deposition time in chemically deposited ZnS films in acidic solution

Optimising conditions for the growth of nanocrystalline ZnS thin films from acidic chemical baths

Quantitative Study on the Chemical Solution Deposition of Zinc Oxysulfide

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