2020
DOI: 10.1016/j.rinma.2020.100104
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Preparation and characterization of ZnO, MgO and ZnO–MgO hybrid nanomaterials using green chemistry approach

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Cited by 31 publications
(11 citation statements)
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“…The precipitation method has been used extensively to prepare ZnO NPs [ 9 , 10 , 11 , 12 , 13 , 14 ]. Recently, Lam et al synthesized iron-doped ZnO (Fe-ZnO) nanoparticles according to a simple and green method utilizing Hibiscus rosa-sinensis leaf extract, reporting the properties of these nanoparticles for the inactivation of Escherichia coli ( E. coli ) under sunlight irradiation [ 9 ].…”
Section: Introductionmentioning
confidence: 99%
“…The precipitation method has been used extensively to prepare ZnO NPs [ 9 , 10 , 11 , 12 , 13 , 14 ]. Recently, Lam et al synthesized iron-doped ZnO (Fe-ZnO) nanoparticles according to a simple and green method utilizing Hibiscus rosa-sinensis leaf extract, reporting the properties of these nanoparticles for the inactivation of Escherichia coli ( E. coli ) under sunlight irradiation [ 9 ].…”
Section: Introductionmentioning
confidence: 99%
“…In the O 1s spectrum (Figure 5e), the O 1s peak could be divided into two peaks at 529.1 and 529.6 eV, which were attributed to the metal–oxygen bonds. [ 30,31 ] Two peaks centered at 337.2 and 342.4 eV (Figure 5f) were attributed to Pd 3d 5/2 and Pd 3d 3/2 , respectively. The valence band energy (EVB) of BiVO 4 was 1.83 eV (Figure 5g).…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, secondary phases relating to Mg (OH) 2 and FTO glass substrate were observed in the XRD spectra. Interestingly, aside these known phases no other peaks relating to impurities were found [8]. The presence of Mg (OH) 2 was localised at angle (2θ) = 37.89 • and 51.49 • which correspond to 101 and 102 planes.…”
Section: Methodsmentioning
confidence: 99%
“…Magnesium oxide ex-hibits the cubic crystalline structure and has interesting properties because of its thermal and chemical stability properties [4]. It is non-toxic and has been employed as a layer material for the fabrication of thin film transistors (TFTs) for nextgeneration of electronic devices owing to its large dielectric constant (9.8) [5,6,7,8].…”
Section: Introductionmentioning
confidence: 99%