Preparation and characterization of Sb2Se3 thin films prepared by electrodeposition for photovoltaic applications

Fernández, Arturo; Merino, M.

doi:10.1016/s0040-6090(00)00716-1

Cited by 89 publications

(37 citation statements)

References 8 publications

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“…Taking into account their corresponding stripping peaks, A2 and A3, and based upon a three-electron process for the reduction of Sb, the coverage for peak C1(C2) is calculated as 0.78 monolayer (ML). This result is similar to that obtained in our previous study on CoSb 3 [23]. The second reductive peak (C3) should correspond to both HER and bulk deposition of Sb.…”

Section: Resultssupporting

confidence: 91%

“…3b, when the cathodic limit of cyclic voltammetry scanning is more negative than −0.40 V, an additional reduction peak C3 is observed at −0.42 V. Furthermore, A1, the stripping peak of bulk Se, decreases with the moving toward more negative cathodic limits. As already reported in literature [31], the C3 peak should correspond to the reduction of bulk Se to Se 2− , according to reaction (3).…”

Section: Resultssupporting

confidence: 72%

“…Due to its promising applications in several fields such as optoelectronic, photovoltaics, batteries, and thermoelectric energy conversion, both elaboration and characterization of this compound have been largely studied (see for example ref. [3][4][5][6][7][8]). Miniaturization of the devices requires the use of thin films which are usually prepared by physical vapor deposition methods.…”

Section: Introductionmentioning

confidence: 99%

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Underpotential deposition of selenium and antimony on gold

Chen

Wang

Pradel

et al. 2015

J Solid State Electrochem

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International audienceThe present paper is a detailed study on the deposition of Sb2Se3 thin films by electrochemical atomic layer epitaxy (EC-ALE). The related electrochemical aspects have been deeply investigated by means of cyclic voltammetry, anodic potentiodynamic scanning, and coulometry. The UPD layer of Se was obtained by first depositing both UPD Se and a small amount of bulk Se and then stripping the redundant bulk Se in blank solutions. A "two times rinsing" method was developed to avoid the formation of red Se during the rinsing process. The deposition parameters were determined for the first three EC-ALE cycles, and from these values, a nanofilm containing Sb and Se atoms has been obtained. By scanning electron microscopy and coulometry, it was shown that the deposit is compact and it has a stoichiometry very close to that of Sb2Se3. The Raman spectral analyses show that the deposit is made of Sb2Se3 nanoclusters

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Section: Resultssupporting

confidence: 91%

Section: Resultssupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Underpotential deposition of selenium and antimony on gold

Chen

Wang

Pradel

et al. 2015

J Solid State Electrochem

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show abstract

“…It has received attention as a thermoelectric material, and recently as a light sensitizer in photovoltaic devices because of its narrow band gap of about 1.1 eV-1.3 eV, which approaches the ideal Shockley−Queisser value [24][25][26]. These films have been produced via a number of methods, including thermal evaporation, chemical bath deposition, spray pyrolysis, pulsed laser deposition and electrochemical deposition [25,[27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

et al. 2017

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Abstract:Metal chalcogenides based on the C-M-M-C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb 2 Se 3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb 2 Se 3 (intrinsically p-type) that display diode characteristics were also grown.

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“…The electrodeposition technique has been a promising deposition method to grow thin films. In particular, for absorber films in solar cell, this technique is a perspective competitor because of several advantages such as the possibility for large-scale production, minimum waste of components and easy monitoring of the deposition process 13 . This technique is generally less expensive than those prepared by the capital-intensive physical methods.…”

Section: Introductionmentioning

confidence: 99%

Cathodic Electrodeposition and Characterization of ni3se2 thin Films

Kassim

Zainal

Saravanan

et al. 2017

AJSTD

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Nickel selenide thin films have been potentiostatically electrodeposited on titanium substrate at room temperature from aqueous solution containing Ni-EDTA and Na 2 SeO 3 . Various deposition potentials were attempted in order to determine the optimum electrodeposition potential. The films were characterised using x-ray diffraction analysis (XRD) and the photoactivity of the electrosynthesised films were studied using linear sweep voltammetry (LSV). The band-gap energy was determined using UV-visible spectroscopy. The XRD analysis indicated the formation of polycrystalline Ni 3 Se 2 . The film exhibited p-type semiconductor behaviour with good photosensitivity. The bandgap energy (E g ) was about 1.4eV.

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Preparation and characterization of Sb2Se3 thin films prepared by electrodeposition for photovoltaic applications

Cited by 89 publications

References 8 publications

Underpotential deposition of selenium and antimony on gold

Underpotential deposition of selenium and antimony on gold

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

Cathodic Electrodeposition and Characterization of ni3se2 thin Films

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