Preparation and characterization of oxadiazole based electron transporting thin films

Mahajan, Aman; Aulakh, Ramanpreet Kaur; Bedi, R. K.

doi:10.1007/s13391-012-2010-5

Cited by 3 publications

(3 citation statements)

References 16 publications

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“…The capacitance is known as an important parameter of the ESD protection device that represents a speedy response time in absorbing transient energy like ESD events. Therefore, for the fast device, the capacitance should be smaller as much as possible, in order to minimize the RC time constant that known as the limiting speed parameter of device [12]. Fig.…”

Section: Device Simulation and Resultsmentioning

confidence: 99%

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Bouangeune¹,

Vilathong²,

Cho³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Section: Device Simulation and Resultsmentioning

confidence: 99%

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Bouangeune¹,

Vilathong²,

Cho³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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“…[16][17][18][19] It has been reported that the EM reliability is related to the adhesion between Cu and the capping material. [20][21][22][23][24][25][26] Therefore, it is useful to study the EM reliability by means of the quantitative adhesion test of the interface between Cu and the capping material. 18) The interfacial adhesion between the capping layer and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers, which leads to device failure.…”

Section: Introductionmentioning

confidence: 99%

Effect of Post-Chemical–Mechanical Polishing Surface Treatments on the Interfacial Adhesion Energy between Cu and a Capping Layer

Kim

Kang

Hwang

et al. 2013

Jpn. J. Appl. Phys.

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The effect of post-chemical–mechanical polishing (CMP) surface treatments on the interfacial adhesion energies between electroplated Cu thin film and SiN x capping layer was evaluated using a four-point bending test. The polished Cu surface was treated by one of three methods: no surface treatment, cleaning by plasma with a vacuum break, and cleaning by the wet chemical method. X-ray photoemission spectroscopy (XPS) analysis on the delaminated interfaces, cross-sectional high-resolution transmission electron microscopy (HR-TEM), and also the electron energy loss spectroscopy (EELS) analysis were performed on the interfaces. The interfacial adhesion energy increases with post-CMP cleaning, which is strongly influenced by the effective removal of residual oxygen at the Cu surfaces.

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“…GaN-based LEDs need special protection to maintain normal functions under frequent electrical shocks such as electrostatic discharge/electrical overstress (ESD/EOS). Their ESD robustness is limited to extremely low levels of 0.3∼4 kV [1][2][3]. Such weakness originates from unavoidable crystalline defects present inside the III-nitride epitaxial films.…”

Section: Introductionmentioning

confidence: 99%

Robust ESD protection for high brightness GaN LEDs using new TVS Zener diodes

Choi

Cho

Choi

et al. 2011

Semicond. Sci. Technol.

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The electrostatic discharge (ESD) stability of GaN-based LEDs, which are assembled with new transient voltage suppression (TVS) Zener diodes, has been characterized in experiments on reverse leakage current and functionality. Advantageous features of TVS Zener diodes with extremely low differential resistance and low leakage current have enhanced their ESD protection capability, especially at high temperature. The TVS Zener presented an excellent performance in protecting GaN-based LEDs from ESD stress exceeding the human body model ±8 kV at 110 • C. The ESD robustness of the high-temperature stability is analyzed in order to provide proper reliability under hostile environment of massive heat and light delivered from LEDs.

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Preparation and characterization of oxadiazole based electron transporting thin films

Cited by 3 publications

References 16 publications

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Effect of Post-Chemical–Mechanical Polishing Surface Treatments on the Interfacial Adhesion Energy between Cu and a Capping Layer

Robust ESD protection for high brightness GaN LEDs using new TVS Zener diodes

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