Preparation and characterization of organic soluble polyimides with low dielectric constant containing trifluoromethyl for optoelectronic application

Hu, Kaitai; Ye, Qingqing; Fan, Yingtao; Nan, Junyi; Chen, Fangyuan; Shen, Yingzhong

doi:10.1016/j.eurpolymj.2021.110566

Cited by 31 publications

(14 citation statements)

References 40 publications

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“…However, these modified Si–PI films still possess comparatively high thermal stabilities, as well as high transparency and fluorescence, low k , and high solubility in both polar and nonpolar solvents, which are much better than those of the aromatic PI containing bulky side groups reported in the literature. 38 − 42 The multifunctional Si–PI films with excellent combined properties are suitable for wide applications in optical and microelectronic devices.…”

Section: Resultsmentioning

confidence: 99%

“…After the above discussion, it is evident that the modified Si–PI films display lower thermal stability compared with OH–PI films, , which can be explained by the reduced intermolecular attraction forces (e.g., hydrogen bonding) in Si–PI chain and the increased free volume associated with the TBDPS groups. However, these modified Si–PI films still possess comparatively high thermal stabilities, as well as high transparency and fluorescence, low k , and high solubility in both polar and nonpolar solvents, which are much better than those of the aromatic PI containing bulky side groups reported in the literature. − The multifunctional Si–PI films with excellent combined properties are suitable for wide applications in optical and microelectronic devices.…”

Section: Resultsmentioning

confidence: 99%

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Simultaneously Improving the Optical, Dielectric, and Solubility Properties of Fluorene-Based Polyimide with Silyl Ether Side Groups

Liu

Zhao

2022

ACS Omega

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Three fluorene-based polyimides with silyl ether groups (Si–PIs) were successfully synthesized by a simple and efficient silicon etherification reaction of hydroxyl-containing polyimides (OH–PIs) and tert -butylchlorodiphenylsilane (TBDPSCl), and their structures were confirmed by 1 H NMR and IR spectra. The bulky nonpolar tert -butyldiphenylsilyl (TBDPS) side groups in the modified PI unit instead of the strong electron donor −OH group is conducive to decreasing electronic conjugation and charge transfer (CT) interaction along the PI chain. Accordingly, the optical, dielectric, and solubility properties of the modified Si–PI films are simultaneously improved compared with the precursor OH–PI films. The modified Si–PI films demonstrate a meaningful enhancement in the transmittances at a wavelength of 400 nm ( T 400 ) to 74–81% from 42 to 55% of OH–PI films and the regeneration of fluorescence characteristics. The dielectric constant and loss of Si–PI films are also obviously reduced to 2.63–2.75 and 0.0024–0.0091 at 1 kHz from 4.19 to 4.78 and 0.0173–0.0295 of OH–PI films, respectively, due to substituted with the bulky nonpolar TBDPS groups to increase the free volume and hydrophobicity of Si–PI films. The solubility of Si–PIs in low- or nonpolar solvents (such as CHCl 3 , CH 2 Cl 2 , acetone, and toluene) is significantly improved. Furthermore, Si–PI films still maintain relatively good thermal properties with the 5% weight loss temperature ( T 5% ) in the range 470–491 °C under a nitrogen atmosphere and the glass transition temperature ( T g ) in the range 245–308 °C.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Simultaneously Improving the Optical, Dielectric, and Solubility Properties of Fluorene-Based Polyimide with Silyl Ether Side Groups

Liu

Zhao

2022

ACS Omega

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“…[6][7][8][9][10] Even so, the dielectric constant of traditional PI is between 3.0 to 4.0, make it insufficient for meeting the requirement of rapidly developing microelectronics and 5G. [11] It is urgent to further reduce the dielectric constant of PI film for their wider applications.…”

Section: Introductionmentioning

confidence: 99%

Overall Improvement in Dielectric, Water Resistance and Mechanical Properties of Polyimide Film via Synergy between GO and Sandwich‐type Porous Structure

Han

Zhang

et al. 2023

Chemistry An Asian Journal

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Simultaneous improvement in dielectric, water resistance and mechanical properties of polyimide (PI) films is critical for their practical use, but difficult to achieve. Herein, a sandwich‐type porous GO/PI film with excellent comprehensive properties was obtained through integrating a GO‐containing complex, fluorine‐containing porous structure and sandwich‐type distribution of porous structure by a simple, low‐cost and green breath figure method. With the addition of only a small amount of GO‐containing complex, a low dielectric constant of 2.21, water absorption of 0.51%, increment in dielectric constant after moisture treatment of 1.60% and high tensile strength of 113.1 MPa, tensile modulus of 1.70 GPa, with 35.39%, 79.42%, 81.81% of reduction and 17.22%, 21.43% of increase compared to PI film were shown, respectively. Moreover, these properties could be adjusted through regulating the component and porous structure by changing the parameters of breath figure method. These outstanding properties make the film a promising candidate for high‐performance low‐dielectric materials.

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“…Under the background of continuous improvement of chip packaging interconnection density and further development of high-speed communication, some adverse phenomena such as resistance–capacitance (RC) delay and signal crosstalk will be more serious. − To better realize high-frequency signal transmission, one solution is to reduce the dielectric constant of the dielectric film in the chip. − Organic insulating films have the characteristics of low preparation temperature, simple process, and lower dielectric properties. , It has obvious advantages in high-density three-dimensional (3D) electronic packaging . However, how to further reduce the dielectric constant of organic insulating films poses a greater challenge for researchers.…”

Section: Introductionmentioning

confidence: 99%

“…5−9 Organic insulating films have the characteristics of low preparation temperature, simple process, and lower dielectric properties. 10,11 It has obvious advantages in high-density three-dimensional (3D) electronic packaging. 12 However, how to further reduce the dielectric constant of organic insulating films poses a greater challenge for researchers.…”

Section: Introductionmentioning

confidence: 99%

Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

Cao

Zheng

Xue

et al. 2022

ACS Appl. Electron. Mater.

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In the current electronics industry, chip interconnect density is continuously increasing and high-frequency communication is further developed. To effectively reduce the adverse effects such as resistance−capacitance delay and signal crosstalk, it is urgent to develop organic dielectric films with lower dielectric constants. In this study, chemical grafting method via aryl diazonium chemistry is used to deposit polymethylmethacrylate (PMMA) films on the porous Si surface. The differences in surface morphology and structure of thin films on flat silicon and porous silicon are studied. In addition, we study the effect of substrate porosity on the dielectric constant, and finally obtain porous PMMA films with dielectric constants ranging from 1.9 to 1.5. Compared with the PMMA film prepared on flat silicon, the film prepared on porous silicon has the advantages of faster growth rate, larger thickness adjustable range, stronger adhesion to the substrate, and lower dielectric constant. The dielectric constant of uniform porous PMMA films obtained in this experiment is further decreased compared with inorganic SiO 2 (ε 1 = 3.9) and dense PMMA films (ε 1 = 2.8−2.4). And the dielectric loss of PMMA films also decreases with the increase of porosity. This is a method for preparing porous polymers, which is more suitable for in situ thin film preparation in high-density electronic interconnections than traditional methods for preparing porous polymers. Theoretically, this method can be used to prepare other vinyl organic films on porous silicon surface, making it have better application prospects in the field of higher-frequency communication in the future.

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Preparation and characterization of organic soluble polyimides with low dielectric constant containing trifluoromethyl for optoelectronic application

Cited by 31 publications

References 40 publications

Simultaneously Improving the Optical, Dielectric, and Solubility Properties of Fluorene-Based Polyimide with Silyl Ether Side Groups

Simultaneously Improving the Optical, Dielectric, and Solubility Properties of Fluorene-Based Polyimide with Silyl Ether Side Groups

Overall Improvement in Dielectric, Water Resistance and Mechanical Properties of Polyimide Film via Synergy between GO and Sandwich‐type Porous Structure

Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

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