Preparation and characterization of nano structured SnS&lt;inf&gt;2&lt;/inf&gt; by solid state reaction method

Manoharan, C.; Kiruthigaa, G.; Dhanapandian, S.; Kumar, K. Santhosh; Jothibas, M.

doi:10.1109/icanmeet.2013.6609226

Cited by 6 publications

(4 citation statements)

References 22 publications

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“…The blue-shift is due to confinement effects in SnS 2 nanoparticles 22 and the red-shift may stem from deep level emission from a stoichiometric variation in nanostructured SnS 2 . [21][22][23]56 One calculated bandgap for single crystal SnS 2 using HSE06 techniques is 2.24 eV, 57 close to our experimental value. Our observed PL peaks as well as existing reports imply that SnS 2 flakes with more than one monolayer possess a direct bandgap.…”

Section: Crystal Growth and Designsupporting

confidence: 85%

“…Various methods from simple to elaborate have been used to grow SnS 2 single crystals, nanostructures, and films. Examples include mechanical and chemical exfoliations, chemical vapor transport using iodine as the transport agent, , chemical vapor deposition (CVD) using SnO 2 , atmospheric vapor pressure deposition using SnS 2 , hydrothermal, ,,− wet chemistry, solid state reaction, , atomic layer deposition, solvothermal method, and hot-injection method . In this work we present a one-step method with a short turn-around time to grow single crystalline ultrathin (a few nanometers) to thin SnS 2 (hundreds of nanometers) flakes with diameters of over tens of microns on amorphous SiO 2 substrates: coevaporation of Sn at 600 °C and S at 150 °C under Ar flow on SiO 2 substrates held at 600 °C.…”

Section: Introductionmentioning

confidence: 99%

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Large Single Crystal SnS₂ Flakes Synthesized from Coevaporation of Sn and S

Yang¹,

Dash²,

Littlejohn³

et al. 2016

Crystal Growth & Design

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Remarkable properties of layered metal dichalcogenides and their potential applications in various fields have raised intense interest worldwide. We report tens of microns-sized ultrathin single crystal SnS 2 flakes grown on amorphous substrates using a simple one-step thermal coevaporation process. X-ray pole figure analysis reveals that a majority of flakes are oriented with the (0001) plane parallel to the substrate and a preferred fiber texture. For few-layer-thick SnS 2 , Moire patterns of 6-fold and 12-fold symmetries are observed by transmission electron microscopy imaging and diffraction. These patterns result from the relative rotation between SnS 2 layers in the ultrathin flake. The 12-fold symmetry is consistent with a known quasicrystal pattern. The photoluminescence spectrum supports that these ultrathin flakes possess a direct bandgap. Carrier lifetime measured by time resolved photoluminescence of a single flake is a few nanoseconds. These results improve our understanding of the formation and shape of ultrathin SnS 2 flakes.

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Section: Crystal Growth and Designsupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Large Single Crystal SnS₂ Flakes Synthesized from Coevaporation of Sn and S

Yang¹,

Dash²,

Littlejohn³

et al. 2016

Crystal Growth & Design

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“…Moreover, the tiny peaks around 37.6 and 41.9° are detected and are assigned to Cu 3 Sn phase . The peaks assigned to phases of Cu 2 S, SnS 2 , and SnS appear as the temperature increases to 300 °C, indicating the occurrence of reactions between Cu, Sn, and S atoms at this temperature . It is noted that the intensity of peaks originated from Cu 3 Sn phase enhances accompanied with the disappearance of peaks from Cu 6 Sn 5 , which suggests the existence of reaction (1) as shown below:

{2 C u}_{6} {S n}_{5} + 19 S \to {3 C u}_{2} S + {8 S n S}_{2} + {2 C u}_{3} S n,

{2 C u}_{3} S n + 7 S \to {3 C u}_{2} S + 2 {S n S}_{2},

{C u}_{2} S + {S n S}_{2} \to {C u}_{2} {S n S}_{3} .

…”

Section: Resultsmentioning

confidence: 92%

Investigation on evaporation and suppression of SnS during fabrication of Cu₂SnS₃ thin films

Tang

Kosaka

Uegaki

et al. 2015

Physica Status Solidi (a)

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Phone/Fax: þ81 77 561 4836Reaction processes for fabrication of Cu 2 SnS 3 (CTS) thin films by sulfurization of Cu-Sn precursors are investigated by X-ray diffraction (XRD) patterns and scanning electron microscope (SEM) images. The results reveal that the S atoms first react with Cu and Sn atoms to produce Cu 2-x S, SnS 2 and SnS intermediate phases, and it is noted that the bilayer features, i.e., Cu 2-x S is located near the surface while SnS and SnS 2 are situated at the bottom, are observed initially with the temperature lower than 400 8C. As the temperature increases, these intermediate phases react with each other to form the final CTS phase. Simultaneously, the evaporation of SnS is accompanied by the reaction and consequent voids are formed in the resulting films. In addition, the evaporation of SnS can be suppressed by performing the sulfurization in a sealed space, which is attributed to the increase of partial pressure of SnS and S. A conversion efficiency of 1.2% for a solar cell with structure of Al/ZnO:Al/ZnO/CdS/CTS/Mo/soda lime glass is demonstrated.

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“…We observed only one PL peak at 542 nm (2.28 eV) for the SnS 2 film. Measured PL peaks reported in the literature vary widely from no significant peak, single peak around 625 nm (1.90 eV), two peaks at 526 (2.35 eV) and 819 nm (1.51 eV), two peaks at 620 (2.29 eV) and 700 nm (1.87 eV) for a single crystal, and 551 nm (2.2 eV) from multilayered SnS 2 . These wide variations may be caused by film orientation, mixed phases, crystalline quality, thickness, confinement, defects, and impurities.…”

Section: Results and Discussionmentioning

confidence: 99%

Tuning the Phase and Optical Properties of Ultrathin SnS_x Films

et al. 2016

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Novel materials suitable for optoelectronics are of great interest due to limited and diminishing energy resources and the movement toward a green earth. We report a simple film growth method to tune the S composition, x from 1 to 2 in semiconductor ultrathin SnS x films on quartz substrates, that is, single phase SnS, single phase SnS2, and mixed phases of both SnS and SnS2 by varying the sulfurization temperature from 150 to 500 °C. Due to the ultrathin nature of the SnS x films, their structural and optical properties are characterized and cross-checked by multiple surface-sensitive techniques. The grazing incidence X-ray diffraction (GIXRD) shows that the single phase SnS forms at 150 °C, single phase SnS2 forms at 350 °C and higher, and mixed phases of SnS and SnS2 form at temperature between. GIXRD shows structures of SnS film and SnS2 film are orthorhombic and 2H hexagonal, respectively. To complement the GIXRD, the reflection high energy electron diffraction pattern analysis shows that both pure phases are polycrystalline on the surface. Raman spectra support existence of pure phase SnS, pure phase SnS2, and mixed phases of SnS and SnS2. X-ray photoelectron spectroscopy reveals that the near surface stoichiometry of both single phase SnS and single phase SnS2 are close to Sn/S ratios of 1:1 and 1:2, respectively. UV–vis spectroscopy shows the optical absorption coefficient of SnS film is higher than 105 cm–1 above the optical bandgap of 1.38 ± 0.02 eV, an ideal optical absorber. A two-terminal device made of SnS film grown on SiO2 substrates shows good photoresponse. The SnS2 has an optical bandgap of 2.21 ± 0.02 eV. A photoluminescence (PL) peak of SnS2 film is observed at ∼542 nm. Time-resolved PL of the single phase ultrathin SnS2 film indicates a carrier lifetime of 1.62 ns, longer than sub nanosecond lifetime from multilayer SnS2. Our comprehensive results show that ultrathin SnS and SnS2 films have the required properties for potential photodetectors and solar cell applications but consume much less material as compared with current thin film devices.

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Preparation and characterization of nano structured SnS<inf>2</inf> by solid state reaction method

Cited by 6 publications

References 22 publications

Large Single Crystal SnS₂ Flakes Synthesized from Coevaporation of Sn and S

Large Single Crystal SnS₂ Flakes Synthesized from Coevaporation of Sn and S

Investigation on evaporation and suppression of SnS during fabrication of Cu₂SnS₃ thin films

Tuning the Phase and Optical Properties of Ultrathin SnS_x Films

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Preparation and characterization of nano structured SnS<inf>2</inf> by solid state reaction method

Cited by 6 publications

References 22 publications

Large Single Crystal SnS2 Flakes Synthesized from Coevaporation of Sn and S

Large Single Crystal SnS2 Flakes Synthesized from Coevaporation of Sn and S

Investigation on evaporation and suppression of SnS during fabrication of Cu2SnS3 thin films

Tuning the Phase and Optical Properties of Ultrathin SnSx Films

Contact Info

Product

Resources

About

Large Single Crystal SnS₂ Flakes Synthesized from Coevaporation of Sn and S

Large Single Crystal SnS₂ Flakes Synthesized from Coevaporation of Sn and S

Investigation on evaporation and suppression of SnS during fabrication of Cu₂SnS₃ thin films

Tuning the Phase and Optical Properties of Ultrathin SnS_x Films