Preparation and Characterization of Manganese Oxide Thin Films

Valletta, R. M.; Pliskin, W. A.

doi:10.1149/1.2426786

Cited by 25 publications

(8 citation statements)

References 8 publications

(10 reference statements)

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“…Various structural, electronic, and magnetic properties of manganese-based oxides are mainly aected by various oxidation conditions and locations of the manganese ions in the unit cell of these oxides. Dierent methods have been employed to fabricate manganese oxide thin lms, such as sputtering [1,2], electron beam evaporation [3], pulse laser deposition [4,5], molecular beam epitaxy [6,7], electrochemical [8], spray pyrolysis [9,10] and solgel [11,12]. Although the structural, electronic and magnetic properties of manganese oxide have been well investigated, to the author's knowledge, their optical properties have hardly been investigated so far.…”

Section: Introductionmentioning

confidence: 99%

Influences of Annealing Temperature on the Optical and Structural Properties of Manganese Oxide Thin Film by Zn Doping from Sol-Gel Technique

Pishdadian

Ghaleno

2013

Acta Phys. Pol. A

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Thin lms of MnO2, Mn2O3, and Mn3O4 have been grown from single precursor solution by varying the post-annealing condition on the glass and corning substrate using a solgel technique. By annealing in air and at temperature between 600 and 800• C, cubic Mn2O3 lms could be formed. The lms were thermally annealed at dierent temperatures between 300 and 800• C to create dierent crystalline structure. Even under the air-annealing condition, Zn doping results in a structural transformation from cubic ZnxMn2−xO3 to tetragonal ZnxMn3−xO4. X-ray diraction, atomic force microscopy, and UV-visible spectra were used to characterize the eect of thermal annealing on the optical and structural properties of a Zn doped manganese oxide thin lm. Optical properties of the Mn2O3 and Mn3O4 lms have been investigated by pointwise unconditioned minimization approach.

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Section: Introductionmentioning

confidence: 99%

Influences of Annealing Temperature on the Optical and Structural Properties of Manganese Oxide Thin Film by Zn Doping from Sol-Gel Technique

Pishdadian

Ghaleno

2013

Acta Phys. Pol. A

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“…This is counter to previous results on sputtered manganese oxide thin films, that found that temperature was the most critical factor determining the oxidation state. 16 -3 Torr.…”

Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%

“…15 Sputtering (another form of physical vapour deposition) has also been used to grow manganese oxide thin films, where the temperature, partial pressure of oxygen, and thin film morphology have been found to be critical in determining the oxidation state and preformance. 2,16,17 High-throughput experimental (HTE) combinatorial research methods are well suited to mapping complex processing-composition-structure relationships of materials in thin film form. 18,19 In particular, combinatorial PLD can rapidly identify the key variables directing phase formation in ternary and more complex materials using metal composition spreads.…”

Section: Introductionmentioning

confidence: 99%

Phase formation of manganese oxide thin films using pulsed laser deposition

et al. 2021

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“…Recently, a number of studies have been reported dealing with the nucleation and growth of the plated metal layer (4)(5)(6), and the morphology of the sensitizing layer. However, we have been able to find no published work studying in detail the chemical composition of the film deposited by the tin chloride bath, or on the chemistry of the bath itself.…”

Section: Solution Chemistry and Colloid Formation In The Tin Chloridementioning

confidence: 99%

Sputtered Manganese Dioxide as Counterelectrodes in Thin Film Capacitors

Landorf¹,

Licht²

1972

J. Electrochem. Soc.

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Manganese dioxide films were sputtered with resistivities as low as 0.3 ohm-cm. Ta-Ta2Os-MnO2-Metal (TMM) capacitors were fabricated and found to have dissipation factors of 0.008 at 1 kHz and 0.011 at 100 kHz. Leakage currents for the TMM capacitors were 10-gA when measured at 75V (33% of the anodizing voltage). By chemically removing the sputtered MnO2 from the capacitors and then replacing the counterelectrodes the effect of sputtering on the dielectric could be observed. It was found that rf -~ 2 kV d-c sputtering conditions increased the dielectric dissipation factor by ~20% while the 3 kV d-c ~ rf conditions caused a 50% increase in the dielectric dissipation factor. The sputtered MnO~ films were found to be 7-MnO2 and showed a conduction activation energy of 0.10 eV (• for 3 kV d-c -~ rf and 2 kV d-e ~-rf indicating that similar material has been deposited under both sputtering conditions.The use of manganese dioxide in thin film capacitors has been studied by McLean and Rosztoczy (1) and various techniques have been used to deposit the Independent variables manganese dioxide films. These methods include pyro-D-C lytic spraying (1), electroless deposition (2), reactive Pres-current sure drawn Grid evaporation (3), and reactive sputtering (4,5). The D-C + rf (/D (mA) used results of these studies, in general, were: (i) MnO2 is beneficial to thin film capacitor reliability and 20 40~ NO initial yield, (ii) the dissipation factor of the capaci-20 0 No 20 0 NO tors were an order of magnitude higher at 1 kHz than 20 45 +50v the equivalent Ta-Ta2Oh-Metal (TM) capacitor, (iii) 20 33 +hV 20 35 --25V the dissipation factor became much higher at higher 20 45 -lOOT frequencies, and (iv) the resistivity of the MnO2 was always >5 ohm-cm, if, in fact, MnO2 was deposited.The bulk of the work on Ta-Ta2Oh-MnOx-Metal (TMM) capacitors has involved only pyrolytically deposited MnOz films of high resistivity (,.~103 ohmcm) and the purpose of this study was to investigate the properties of TMM capacitors with sputtered MnO2 films. The effects of various sputtering conditions on dissipation losses in the dielectric, the effect of MnO2 on the dissipation factor, and the effect of counterelectrode area were studied. In addition to capacitance measurements, capacitor yields, and leakage current measurements were made for comparison with TM capacitors. ExperimentalThe manganese dioxide films were sputtered in a conventional, diffusion pumped vacuum system as shown in Fig. 1. The sputtering cathode was in two / \ equal area sections so the rf supply could be operated in the push-pull mode. The rf supply was operated at SUSSTRATE~ 7.5 mHz for the present experiments with a constant TAeLE ~ ~ ~---, --100W power input. The cathode-substrate separation ~ J was 6.3 cm. The cathode was 8 in. in diameter and SHUTTER---~ H ~__ ~------i made of electrodeposited Mn metal (99.5% Mn). J Three 7050 glass slides were mounted on the substrate table for each run. ~ ~ l The substrates were 1 in. • 3 in. glass slides with SPUTTERING' TO the tantalum a...

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Preparation and Characterization of Manganese Oxide Thin Films

Cited by 25 publications

References 8 publications

Influences of Annealing Temperature on the Optical and Structural Properties of Manganese Oxide Thin Film by Zn Doping from Sol-Gel Technique

Influences of Annealing Temperature on the Optical and Structural Properties of Manganese Oxide Thin Film by Zn Doping from Sol-Gel Technique

Phase formation of manganese oxide thin films using pulsed laser deposition

Sputtered Manganese Dioxide as Counterelectrodes in Thin Film Capacitors

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