Preparation and characterization of In2Se3 thin films

Chemical incorporation of copper into indium selenide thin‐films for processing of CuInSe2 solar cells

“…The deposition of indium selenide layers has been demonstrated by several methods, including coevaporation of the elements [16], single-source evaporation of In 2 Se 3 [8], sequential electrodeposition of the elements followed by annealing [17], simultaneous electrodeposition of the elements [18], modified chemical bath deposition [19] and spray pyrolysis [20]. In order to provide a high level of control and reproducibility in the indium selenide layers and hence allow the focus of this early-stage work to be maintained on the copper-incorporation process, co-evaporation of elemental indium and selenium was employed in the work reported here.…”

Growth of γ-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures

“…In addition, by examining the variation of PL peak energy as a function of measurement temperature and fitting to it the Varshni equation [19], the energy gap of the present material at room temperature was evaluated to be 1.95 eV. This value is well inside the range of 1.7-2.14 eV issued by other reports [20][21][22]. To further identify the excitonic nature, power-dependent studies were carried out.…”

Phase‐Engineered Type‐II Multimetal–Selenide Heterostructures toward Low‐Power Consumption, Flexible, Transparent, and Wide‐Spectrum Photoresponse Photodetectors

“…[10,11] Unlike bulk TMDCs with an indirect band gap, the direct band gaps of bulk SnSe 2 , SnSe, InSe, and In 2 Se 3 range from 1.1 to 1.7 eV, and they have a high absorption coefficient in the visible light range, which makes them important photoelectric materials. [12][13][14][15][16][17][18] Significant progress has recently been made during investigations of the optoelectric properties of these metal-selenides, [13,15,[19][20][21][22][23][24][25] and as a result, these properties render them ideal as photodetectors in the visible-light range.…”