Abstract. The present work is aimed to investigate theoretically the electronic properties of a double Cd 1-x Zn x S quantum dot embedded in an insulating material. The quantum dots are assumed to have a flattened cylindrical geometry with a finite barrier at the boundary. This system is studied using the tight binding approximation. The energy levels splitting has been computed, for the electrons, versus the Zn composition and the inter-quantum dot separation as well. An analysis of the results shows that the Zn compositions x = 0.4 and x = 0.6 are appropriate to ensure the best coupling for conduction electrons.