Preparation and characterization of chemically derived (Pb,La)TiO/sub 3/ thin films

Schwartz, Robert W.; Tuttle, Bruce A.; Doughty, D.H.; Land, C. E.; Goodnow, D.C.; Hernandez, C.; Zender, T.J.; Martinez, S. L.

doi:10.1109/58.108869

Cited by 30 publications

(5 citation statements)

References 9 publications

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“…This has been supported by XRD observation shown in figure 2(c). The reduction in ferroelectric hysteresis confirms that the donor ions (La and Sr) are incorporated into the PZT lattice and not acting as secondary phase in PSLZT [25,26] and figure 5(a), surface morphology of PSLZT thin films also endorses the above observation. The asymmetry observed in both switching current and polarization loops are caused by the presence of internal bias field into the thin film capacitor structure (Au/Cr/ PSLZT/Pt) due to charge trap near the electrode area [27].…”

Section: Resultssupporting

confidence: 65%

Effect of Sr and La co-doping on structural and electrical properties of RF sputtered PZT thin films

Kathiresan

Manikandan

Premkumar

et al. 2020

Mater. Res. Express

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Doping in lead-zirconate-titanate (PZT) thin films is on the rise for next generation micro-electromechanical systems (MEMS) and energy harvesting applications, owing to their improved ferroelectric and piezoelectric properties. Strontium, lanthanum and neodymium like elements are the most exploited for such applications. This paper reports realization of a PZT thin film with strontium and lanthanum co-doping in tandem, Pb 1−x−3y/2 Sr x La y (Zr 0.56 Ti 0.44 )O 3 x=0.06, y=0.03 (PSLZT), by RF sputtering process. Different process conditions like substrate temperature from 250°C-350°C and annealing temperature from 650°C-750°C are studied to achieve pyrochlore free PSLZT thin film. The structure, surface morphology, surface topography and ferroelectric characteristics are investigated using x-ray diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FE-SEM) and P-E analyser, respectively. Nanoscale polarization switching processes and the local surface displacements are studied to ascertain that the PSLZT thin film exhibits the ferroelectric and piezoelectric properties. Experimental results reveal that the present PSLZT thin film has a polarization of 5.5 μC cm −2 , leakage current density of 10 −5 A cm −2 and piezoelectric charge coefficient, d 33 , of 87 pm V −1 , which are suitable for realization of various new piezoelectric MEMS sensors.

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Section: Resultssupporting

confidence: 65%

Effect of Sr and La co-doping on structural and electrical properties of RF sputtered PZT thin films

Kathiresan

Manikandan

Premkumar

et al. 2020

Mater. Res. Express

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“…The dielectric constant of the film having 10% La is higher than that reported by Swartz [3] for the film having the same composition. As the La content increases, the Curie temperature decreases, as a result, the dielectric constant increases at the same testing temperature (room temperature).…”

Section: Resultscontrasting

confidence: 57%

Effects of la concentration on the texturing and the electrical properties of sol-gel derived PLT thin films

Choi

Kim

Yoon

et al. 1998

Metals and Materials

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Lanthanum doped lead titanate (PLT) thin films consisting of different La concentrations were fabricated on Pt/Ti/SiOJSi using sol-gel method. The films were dried at 440~ for 5 min and fired at 600~ using rapid thermal annealing (RTA) for lmin. The preferred orientation (texturing) and the morphology of the PLT film were changed with La concentration and a possible cause of the texturing has been discussed. The effects of La doping to the Lead titanate films on the dielectric constants, P-E hysteresis loop and pyroelectric coefficient were measured and discussed.

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“…Small quantities of lanthanides have been incorporated in sol-gel processes of alkoxide or acetate-based systems [10][11][12]. However, calcium alkoxides are difficult to prepare and other precursors of this cation are not soluble in sol-gel-derived solutions.…”

Section: Resultsmentioning

confidence: 99%

Preparation of ferroelectric thin films from water-soluble titanate-based gels

Calzada

Sirera

Carmona

1997

J Sol-Gel Sci Technol

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Abstract. A description is made of a wet chemical method for obtaining ferroelectric thin films. The processing is based on a twofold synthetic scheme: the synthesis of a titanate gel from a sol-gel process and the rehydration of this gel during the incorporation into the system of other ions as water-soluble salts. The versatility of this route has made possible preparation of modified lead titanate precursor solutions. Alkaline earth ions or lanthanides such as Ca 2+ or Sm 3+, have been used as modifier elements. Physico-chemical properties of the solutions are studied as well as the reaction mechanisms that make possible the rehydration of the titanate gel. The solutions obtained are used for the deposition and crystallization of titanate based thin films. Crystallinity, microstructure and polarization-electrid field characteristics of the films are shown.

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Preparation and characterization of chemically derived (Pb,La)TiO/sub 3/ thin films

Cited by 30 publications

References 9 publications

Effect of Sr and La co-doping on structural and electrical properties of RF sputtered PZT thin films

Effect of Sr and La co-doping on structural and electrical properties of RF sputtered PZT thin films

Effects of la concentration on the texturing and the electrical properties of sol-gel derived PLT thin films

Preparation of ferroelectric thin films from water-soluble titanate-based gels

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