Preparation and characterization of CdZnTe multilayer films by repeated RF magnetron sputtering

Nanostructured ZnO, Cu2ZnSnS4, Cd1−xZnxTe Thin Films Obtained by Spray Pyrolysis Method

“…The wide range of methods is well developed to deposit ZnO, CZT, and CZTS films which split into physical (for example, magnetron sputtering [12][13][14]) and chemical (for example, Semiconductors -Growth and Characterization spray pyrolysis [5,[8][9][10]) techniques. Typically, the physical methods allow to obtain more perfect films with a higher structural quality, and these methods provide a precise control of the films thickness and low content of defects in deposited material compare to chemical methods, but physical deposition techniques require the usage of more complicated equipment and presence of high level of vacuum, thus they are energy-consuming.…”

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

“…In the glow discharge process, a chemical reaction is initiated in the gas phase, which creates a glow discharge of the reactant gas, and consequently the source material is deposited on the substrate. 48,51,52 In the physical route, various deposition techniques include electron-beam vacuum evaporation, [53][54][55][56][57][58][59] resistive heating-based thermal evaporation, [60][61][62] sputtering, [63][64][65][66][67][68][69] molecular beam epitaxy (MBE), 70,71 pulsed laser deposition (PLD) 72,73 and close-space sublimation (CSS). [74][75][76][77][78][79] The thermal evaporation technique is a vapor deposition technique following the physical route for the deposition of thin films.…”

“…51,52,80,83 Cd 1Àx Zn x Te thin films were deposited on ITO substrates by repeated RF magnetron sputtering using a Cd 0.9 Zn 0.1 Te target at different substrate temperatures (200 1C, 300 1C and 400 1C), where the sputtering gas was set at a pressure of 5 Pa with a deposition time of 3 h. 63 CZT thin films were fabricated on glass substrates employing DC magnetron sputtering at room temperature using a CZT target with a diameter of B2 inches and composition of 30 wt% Cd, 20 wt% Zn and 50 wt% Te, where the base pressure of B10 À4 Pa was developed in the sputtering chamber. 64 Cd 1Àx Zn x Te multilayer films having a thickness in the range of 1360-9230 nm were deposited employing repeated RF magnetron sputtering on ITO-coated glass substrates using Cd 0.9 Zn 0.1 Te as the target material, where the substrate temperature was fixed at 300 1C with a sputtering power of 60 W. 65 Aluminum (Al)-doped CdZnTe thin films were prepared using RF magnetron sputtering on ITO-coated glass substrates employing aluminum-induced crystallization (AIC) technology, 66 where high-purity Al and Cd 0.9 Zn 0.1 Te crystal target were used. To implement AIC technology for the deposition of the CdZnTe/Al layer, the samples were heated for 60 min at 200 1C.…”

Performance of ultraviolet photodetectors based on sputtered CdZnTe films

“…High-performance ultraviolet (UV) photodetectors play a crucial role in monitoring UV radiation across various sectors such as domestic, military, medical, scientific research, and industrial manufacturing [1][2][3][4]. CdZnTe (CZT) is a promising II-VI semiconductor known for its tunable band gap, high atomic number and high resistivity [5,6]. CZT film photodetectors with low cost and large area have garnered significant interest.…”