Preparation and characterization of bismuth nanostructures deposited by pulsed laser ablation

Abstract

-Laser ablation of silver in aqueous ambient: effect of laser pulse wavelength and energy on efficiency of the process P Smejkal, J Pfleger, B Vlcková et al. Abstract. Bismuth nanostructures, from nanoparticles to quasi-percolated films, were deposited by pulsed laser ablation (PLA) on different substrates using the 355 nm line of a Nd:YAG laser. The morphology and size distribution of the obtained nanostructures were investigated, as a function of the number of ablation pulses, by high resolution electron microscopy (HRTEM) and atomic force microscopy (AFM). Deposits with a small number of pulses, 50, are formed of separated isolated particles with diameters in the range from 5 to 20 nm. Further increase in the number of pulses (>100) results in coalescence of individual particles with the formation of dendritic structures and finally, for 500 pulses, quasi-percolated Bi films are obtained. Additionally, the nanostructures formed were characterized by XPS, and Raman spectroscopy in order to determine the physical and chemical properties of the deposited material.

Expediting Hydrogen Evolution through Topological Surface States on Bi2Te3

“…Based on this analysis, we have performed data fitting for the original XPS spectra by adding a peak at the left shoulder of each of the Bi or Te in Bi 2 Te 3 peaks. Indeed, all the raw data are now well fitted as shown in Figure c,d with all the binding energies of major peaks of Bi 2 Te 3 , TeO 2 , and Bi 2 O 3 consistent with the reported standard values. ,,− Interestingly, previous XPS studies reported that an oxidized Te surface contains a small suboxide peak (TeO) besides the dominant TeO 2 peak, , which locates also in the left shoulder of the Te core level, similar to what has been observed in our study. We believe these additional peaks provide the evidence of the existence of the Bi 2 Te 3 suboxide structures predicted from our theoretical studies.…”

“…As can be seen in the top spectra in Figure S8a,b, which were obtained before Ar + sputtering, a peak appears on the left-hand side of each of the four Te and Bi core levels. These four peaks can be assigned to Te in TeO 2 and Bi in Bi 2 O 3 because their binding energies are close to the reported standard values of 586.2 eV (Te 3d 3/2 ), 575.9 eV (Te 3d 5/2 ), 164.3 eV (Bi 4f 5/2 ), and 159.0 eV (Bi 4f 7/2 ) of these two oxides. − It is worthwhile to mention that, before sputtering, the two TeO 2 peaks are more pronounced than the two Bi 2 O 3 peaks. After sputtering for 10 s (middle spectra), the two peaks associated with TeO 2 are barely detectable, while the two peaks associated with Bi 2 O 3 drop only slightly.…”

Quaternary Trimethyl Chitosan Chloride Capped Bismuth Nanoparticles with Positive Surface Charges: Catalytic and Antibacterial Activities

“…Figure 4b displayed the spectrum of Bi 4f core level of QTMC-BiNPs with corresponding binding energies. The two diffraction peaks at 163 eV and 157.1 eV can be attributed to Bi 4f 5/2 and Bi 4f 7/2 , respectively revealing the purity of the synthesized QTMC-BiNP [31]. It is worth noting that the XPS spectrum of Bi 4f region revealed no shoulder binding energies.…”

Organic Matrix Stabilized Ultra‐Fine Bismuth Oxide Particles for Electrochemical Energy Storage Application

“…In the XPS spectrum (Figure C), the Bi 4 f region shows two peaks at 162.2 eV (Bi 4f 5/2 ) and 156.76 eV (Bi 4f 7/2 ). It is reported in the literature that the Bi 4f 5/2 and Bi 4f 7/2 spin‐orbit doublets for bismuth (III) in bismuth oxide shows the binding energy values 163.98 and 158.65 eV, respectively ,. The repulsive interaction between the distorted polyhedral network containing active lone pairs of bismuth and lone‐pair electron of aniline causes the chemical shift that results the lowering of binding energy values of Bi (III) in BO .…”

“…It is reported in the literature that the Bi 4f 5/2 and Bi 4f 7/2 spin-orbit doublets for bismuth (III) in bismuth oxide shows the binding energy values 163.98 and 158.65 eV, respectively. [42,43] The repulsive interac- tion between the distorted polyhedral network containing active lone pairs of bismuth and lone-pair electron of aniline causes the chemical shift that results the lowering of binding energy values of Bi (III) in BO. [44] In the high-resolution XPS, a peak with the binding energy value of 529.78 eV ( Figure 3C) can be assigned for the 1 s spectrum of oxygen.…”