2019
DOI: 10.1016/j.orgel.2018.11.028
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Preparation and application of polystyrene-grafted alumina core-shell nanoparticles for dielectric surface passivation in solution-processed polymer thin film transistors

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Cited by 15 publications
(10 citation statements)
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“…The dielectric constant of the doped film proportionally increased with the filler loading of Al NPs, as shown in Figure 3b, resulting in a significant increase of the dielectric constant to 12.0 for the Al NP filler loading of 50%. This dielectric constant of 12.0 is significantly higher than that of 7.79 for the Al 2 O 3 -doped PS films reported previously [54]. More importantly, the dielectric constants of the doped films were almost frequency independent, which should be attributed to the weak interfacial polarization between the PS films and the doped Al NPs.…”
Section: Resultsmentioning
confidence: 54%
“…The dielectric constant of the doped film proportionally increased with the filler loading of Al NPs, as shown in Figure 3b, resulting in a significant increase of the dielectric constant to 12.0 for the Al NP filler loading of 50%. This dielectric constant of 12.0 is significantly higher than that of 7.79 for the Al 2 O 3 -doped PS films reported previously [54]. More importantly, the dielectric constants of the doped films were almost frequency independent, which should be attributed to the weak interfacial polarization between the PS films and the doped Al NPs.…”
Section: Resultsmentioning
confidence: 54%
“…The nanocomposite film was found to be an efficient surface passivator for the oxide dielectric layer in organic field-effect transistors (OFETs). The field-effect mobility (1.4 × 10 –3 cm 2 /V·s) and threshold voltage (4.4 V) of OFETs with PS-Al 2 O 3 nanoparticles were found to be significantly better than that of nanocomposite with bare Al 2 O 3 nanoparticles (field-effect mobility = 1.7 × 10 –4 cm 2 /V·s threshold voltage = 6.7 V) [ 132 ].…”
Section: Grafting To Methods To Prepare Polymer Grafted Nanoparticlesmentioning
confidence: 99%
“…Traditionally, silicon oxide has been used as a gate insulator mainly because of availability and convenience. Alternative insulators include inorganic oxides with high dielectric constants, cross-linked polymers, , self-assembled nanomaterials, and organic/inorganic hybrid layers. ,, Recently, electrolytes have attracted attention owing to their ultrahigh capacitance for reducing the voltage and its electrochemical characteristics for realizing iontronic devices. ,, Functionalities such as stretchability and self-healing capability can be introduced using elastomers as gate insulators …”
Section: Development Of Materialsmentioning
confidence: 99%