Preliminary Study of Polymer Removal in 0.25, 0.3, and 0.5 µm Ruthenium Storage Nodes and 0.11 µm, 10.9:1 High-Aspect-Ratio Trenches by Laser-Induced Etching
Abstract:The demands for new etching technology are increasing because of new materials, such as, ruthenium (Ru), platinum (Pt), and iridium (Ir), that are now being used, and the strict critical dimension (C/D) controls required in today's ultra large scale integrated (ULSI) circuit technology and dynamic random-access memory (DRAM) fabrication lines. Laser etching technology successfully etched organometallic polymers generated after reactive ion etching and ash processing in 0.25, 0.3, and 0.5 µm Ru storage nodes. I… Show more
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