Abstract:Changes in integrated circuit technology generations are marked by reductions in the minimum feature size of the semiconductor devices. Current state-of-the-art production involves feature size from 0.35 to 0.25 m. One particularly important parameter for scaled metal oxide semiconductor field effect transistors (MOSFETs) is the thickness of the gate dielectrics, which also has to be suitably reduced to maintain proper operation of the devices. Currently, thickness in the range of 6 to 10 nm is used. As the de… Show more
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