Abstract:The recrystallization of silicon layers on a silicon substrate using X-ray analysis and X-ray topography was examined. A preferred crystallization was observed. The crystallites resulting from this process seem to grow along the dislocations consuming part of the elastic energy of the dislocations.Orientierte Siliziumschichten auf Siliziumsubstrat wurden mit Hilfe von Rontgenbeugungsmessungen und Rontgentopographie bestatigt. Die auf diese Weise gewachsenen Kristalle entwickeln sich entlang der Versetzungen un… Show more
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