Preferred Acceptor-Domain Positioning via a Phase-Switched Bulk Heterojunction for Self-Powered Photodetector and Photovoltaic Applications

Abstract

In this study, a phase-switching process is introduced to a PM6:Y6-based active layer to implement a uniform surface with preferred Y6 acceptor-domain positioning and to minimize solution loss owing to the use of medium molds. By designing the process to fit the surface properties of a small-molecule Y6 acceptor-based bulk heterojunction, a sustainable and highly reproducible phase-switched active layer that can be formed at the desired location without wasting materials is successfully formed over an area of 2.25 cm2. It improved charge transport ability and suppressed surface defects owing to a molecular orientation favorable for efficient charge separation and transport. Furthermore, adding chloronaphthalene induced the domain growth of Y6 acceptors with dense molecular packing, which enhanced the effects of the phase-switching process. Uniformly distributed performance in the phase-switched active layer via the phase-switching process was demonstrated in fabricated large active-area devices. Furthermore, the process was utilized in a PM6:Y6-based self-powered photodetector, which improved detectivity owing to the suppression of the dark current density. Therefore, the phase-switching process is an important technology for forming high-quality thin films composed of small-molecule acceptors for efficient self-powered photodetector and photovoltaic applications.

Conductive PEDOT-Dominant Surface of Transparent Electrode Patch via Selective Phase Transfer for Efficient Flexible Photoelectronic Devices

“…The signal-to-noise ratio (SNR) was obtained following a fast Fourier transform (FFT) to confirm PD performance. 79,80 In the transferred PEDOT:PSS patch-based PD, the SNR value was 49.6 dB; this was larger than the SNR value of the spin-coated PEDOT:PSS electrode PD (46.4 dB). This is because the abrupt interface formed through the inverted phase of the transferred PEDOT:PSS patch suppressed the noise current (Figure 5f).…”

“…Accordingly, in Table S8 the N t for the transferred PEDOT:PSS patch device yields a lower trap density (1.15 × 10 16 # cm –3 ) with lower V TFL (0.46 V) compared with that of the spin-coated PEDOT:PSS electrode based on the device’s trap density (1.43 × 10 16 # cm –3 ), and V TFL (0.57 V). The signal-to-noise ratio (SNR) was obtained following a fast Fourier transform (FFT) to confirm PD performance. , In the transferred PEDOT:PSS patch-based PD, the SNR value was 49.6 dB; this was larger than the SNR value of the spin-coated PEDOT:PSS electrode PD (46.4 dB). This is because the abrupt interface formed through the inverted phase of the transferred PEDOT:PSS patch suppressed the noise current (Figure f). , …”

Coherent arrangement of perylene diimide derivative via adhesion-controlled transfer for noise-suppressed light signal detection

“…57 The anti-aggregation assembly passivation layer facilitated efficient electron transport, leading to improved photoresponse and enhanced photocurrent. 58 In particular, the shape of the photoresponse curve revealed the greater suppression of noise with the use of A-NPDI compared with C-NPDI. This effect on the noise was also observed in real-time pulse analysis (Fig.…”

Ultrathin CuBi2O4 on a bipolar Bi2O3 nano-scaffold: a self-powered broadband photoelectrochemical photodetector with improved responsivity and response speed

“…For designing broadband photodetectors, narrow-bandgap semiconductors with wide spectral absorption are expected. [12][13][14][15][16] However, a narrow bandgap is usually accompanied by a low photovoltage, resulting in limited photo-responsivity and a slow response speed. CuBi 2 O 4 has recently emerged as a promising photo-cathode material for PEC water splitting due to its ideal band gap (1.5-1.8 eV) and suitable conduction band positions for both water oxidation and proton reduction.…”