Preferential zinc sputtering during the growth of aluminum doped zinc oxide thin films by radio frequency magnetron sputtering

Norrman, Kion; Norby, Poul; Stamate, Eugen

doi:10.1039/d2tc02180c

Cited by 13 publications

(7 citation statements)

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“…This increases to 752 S cm –1 when doped with aluminum and to 1408 S cm –1 when doped with gallium. The values are generally higher than those reported in the literature (GZO: 10 n = 4.23 × 10 20 cm –3 , σ = 1282 S cm –1 ; AZO: 11 , 24 , 26 , 54 n = 5.1 × 10 20 cm –3 , σ = 1200 S cm –1 ) for similar films deposited by ALD. 55 This important increase is a result of one order of magnitude increase in carrier concentration.…”

Section: Resultscontrasting

confidence: 61%

“…However, to fully harvest the possibilities offered by ZnO-based materials, mastering the deposition process is a must, and in consequence, a lot of research is concentrated in understanding the AZO and GZO deposition process. For example, in the case of PVD synthesis, the scientific community has lately been focusing on the detrimental role of the oxygen ions on the uniformity of deposited films. ,, In the case of ALD synthesis, the latest efforts are oriented toward the understanding of the influence of the dopant/Zn ratio on the growth mode and optoelectronic properties …”

Section: Introductionmentioning

confidence: 99%

“…For example, in the case of PVD synthesis, the scientific community has lately been focusing on the detrimental role of the oxygen ions on the uniformity of deposited films. 11 , 24 , 25 In the case of ALD synthesis, the latest efforts are oriented toward the understanding of the influence of the dopant/Zn ratio on the growth mode and optoelectronic properties. 26 …”

Section: Introductionmentioning

confidence: 99%

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Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications

et al. 2023

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Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities (up to 2700 S cm–1) and enhanced charge mobilities (18 cm2 V–1 s–1). The morphological analysis reveals differences mostly due to the very different nature of the deposition processes. The film deposited via ALD shows an increased transmittance in the visible range and a very small one in the infrared range that leads to a figure of merit of 0.009 Ω–1 (10 times higher than for the films deposited via sputtering). A benchmarking is made with an RF sputtered indium-doped tin oxide (ITO) film used conventionally in the industry. Another comparison between ZnO, Al:ZnO (AZO), and Ga:ZnO (GZO) films fabricated by ALD is presented, and the evolution of physical properties with doping is evidenced. Finally, we processed GZO thin films on a glass substrate into patterned transparent patch antennas to demonstrate an application case of short-range communication by means of the Bluetooth Low Energy (BLE) protocol. The GZO transparent antennas’ performances are compared to a reference ITO antenna on a glass substrate and a conventional copper antenna on FR4 PCB. The results highlight the possibility to use the transparent GZO antenna for reliable short-range communication and the achievability of an antenna entirely processed by ALD.

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Section: Resultscontrasting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications

et al. 2023

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“…Solvent properties can change the geometry of the molecules and the interactions between semiconductor surfaces. Solvents are typically crucial in catalytic conversion reactions due to their numerous properties, which include increased polarity, higher dielectric constant, polarizability, whole solvent molecule and hydrogen bonding [23,24].…”

Section: Introductionmentioning

confidence: 99%

Photo-driven Interfacial Electron Transfer Reduction of cis-[Co(phen) 2 Cl 2 ]Cl Complex by Heterojunctioned CeO 2 /SnO 2 Nanocomposite with Insight on the Role of Supercapacitance

Silambarasan,

Pavalamalar,

Siva

et al. 2023

Preprint

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Nano CeO2/SnO2 composite was successfully synthesised using the hydrothermal method. Nano-CeO2/SnO2 is one of the most widely used photocatalysts in metal oxide-semiconductors and has good photocatalytic activity. Experimental and spectroscopic approaches confirmed the structure and shape of the nanocomposite according to X-ray diffraction, transmission electron microscopy and scanning electron microscopy results. Spectral peaks are shown to migrate with the CeO2/SnO2 composite in experiments using Raman and opacity (PL). The magnetic properties of SnO2 (20.54 emu/g) are higher than CeO2 (6.875 emu/g) nanoparticles and nanocomposite (4.822 emu/g). The different oxidation states of Ce and Sn, which act as active sites in the electrocatalytic activity of this nanocomposite material, were observed using X-ray photoelectron spectroscopy (XPS). The capability of the CeO2/SnO2 composite was demonstrated by additional galvanic charge-discharge experiments at various current densities, cyclic voltammetry measurements at various scan rates (the maximum capacitance value of 718 Fg− 1 from CV and 721 Ag− 1 from GCD). Surface absorption of cis-[Co(phen)2Cl2]Cl curve with binary solvent catalysis, measured the rate (k = 0.0032 sec− 1). Reduction of cis-[Co(phen)2Cl2]Cl by nano-CeO2/SnO2 was traced to the production of Co(II) ion, which was shown to be catalytically efficient by UV-Vis response curves. Lattice analysis showed that the catalytic activity was very effective in binary solvent solution (H2O/PriOH) (254 nm and 365 nm lamp, k = 0.0625 sec− 1 and k = 0.0305 sec− 1) and then in pure water (k = 0.0018 sec− 1). Thus, the enhanced photocatalytic activity of the nano-CeO2/SnO2 material can be attributed to the excellent charge separation and electron transport for reduction efficiency of the photogenerated charge carriers.

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“…Doped zinc oxide (ZnO) films could be a potential solution to these issues because they are less expensive, non-toxic, and more stable than ITO films, and they also have better electrical and optical properties [3]. For example, aluminum (Al) or aluminum oxide (Al 2 O 3 ) doped ZnO (AZO) films exhibit high conductivity and a large optical band gap of 3.3 eV [4]. Additionally, AZO films are unique in that they can be obtained in a crystalline form at ambient temperature, setting them apart from other materials [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Park,

Heo,

Lee

et al. 2023

Appl. Sci. Converg. Technol.

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Aluminum-doped zinc oxide (AZO) films are promising candidates for transparent electronics due to their low resistivity, high transmittance, and long-term stability. In this study, we investigated the impact of sputtering pressure on resistivity saturation in AZO films that are deposited by using radio frequency magnetron sputtering on transparent glass at room-temperature (RT). An X-ray diffraction analysis reveals that RTdeposited AZO (RT-AZO) films prepared at a pressure of 20 Pa exhibit a predominant orientation along the 𝑎-axis, favoring the (100) direction, as well as the lowest resistivity value of ∼ 4 × 10 −3 Ω⋅cm and the highest transmittance (95 %) in the visible range. These findings highlight the potential of our deposition approach for producing highly oriented (100) RT-AZO films, paving the way for their application to low-cost transparent electronics.

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Preferential zinc sputtering during the growth of aluminum doped zinc oxide thin films by radio frequency magnetron sputtering

Abstract: Aluminum doped ZnO is one of the main candidates to replace the indium tin oxide used as a transparent conducting oxide. Despite of intensive research, the mechanism behind the poor...

Cited by 13 publications

References 59 publications

Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications

Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications

Photo-driven Interfacial Electron Transfer Reduction of cis-[Co(phen) 2 Cl 2 ]Cl Complex by Heterojunctioned CeO 2 /SnO 2 Nanocomposite with Insight on the Role of Supercapacitance

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

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