Preferential growth of Si nanocrystals in SiO2/Si/SiO2 sandwich structure

Du, Xi‐Wen; Li, H.; Lu, Ying‐Wei; Sun, Jing

doi:10.1016/j.jcrysgro.2007.04.025

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2008

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“…4(c)]. A similar phenomenon was observed in the case of Si nanoparticles crystallized in SiO 2 /Si/SiO 2 sandwich structure, 26 revealing that the nc-Si lattice crystal growth is easier perpendicularly to the Si-SiO 2 interface and much more limited in the direction of a neighboring nc-Si. Therefore, a concentration threshold for the carrier percolation is attained, which leads to a strong increase of the conduction.…”

Section: Resultssupporting

confidence: 64%

Morphology of Si nanocrystallites embedded in SiO₂ matrix

et al. 2008

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The nanostructure of Si x (SiO 2 ) 1-x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si 0.5 (SiO 2 ) 0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x ജ 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties.

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Section: Resultssupporting

confidence: 64%