Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

Insights to emitter saturation current densities of boron implanted samples based on defects simulations

“…Modeling and simulation of ion implantation induced damage evolution and dopant diffusion has long been used in the IC industry to develop the required dopant profiles and activation [9]. In this work, simulations were performed using Synopsys' TCAD Sentaurus kinetic Monte Carlo code that includes ion implantation induced damage evolution, as well as dopant-defect clustering phenomena [9][10].…”

“…In this work, simulations were performed using Synopsys' TCAD Sentaurus kinetic Monte Carlo code that includes ion implantation induced damage evolution, as well as dopant-defect clustering phenomena [9][10]. However, the mechanism of carrier lifetime degradation is dependent not only on the recombination centres in the presence of defects, but also on the type of interface between the Si and the dielectric, and on the collected charge inside the dielectric.…”

Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization

“…The evolution of dopants and defects during annealing is simulated using non-lattice Kinetic Monte Carlo (KMC) codes (3,6,7). By ignoring the Si lattice atoms and focus on defects and dopants it is possible to simulate actual device sizes and use time steps many orders of magnitude longer than the time period of atom vibration.…”

“…They are becoming very useful tools, not only to understand the physics governing the mechanisms involved in junction formation, but also to complement characterization techniques and to provide clues for process optimization (3,6,7).…”

Object kinetic Monte Carlo simulations of irradiated tungsten for nuclear fusion reactors

“…OKMC use is widely spread not only in the area of research but also in the industry [74][75][76][77][78][79]. Object kinetic Monte Carlo can simulate large time scales of the order of hours or even days and simulation boxes of few μm.…”