Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells

Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

“…Carriers generated along the track are discretized into punctual carrier density and their behavior can be considered to be governed by a pure spherical diffusion (with an ambipolar diffusion coefficient D) [41]. The final current transient extracted from a given contact (off-state drain) is obtained by integrating the product [diffusing charge  average collection velocity v] (evaluated at the level of the surface element dx  dy) over the entire collection area [42]. The upset criterion for a particle track not crossing the drain junction is the I max T max criterion.…”

Optimization of SEU Simulations for SRAM Cells Reliability under Radiation

“…The I inj -V drain criterion could be useful in the case of SER simulation based on simplified current models [3,8,12], where the determination of a SEU criterion is often a concern. Then, a solution to criteria problems is to add a dynamic voltage at the collection electrode.…”

“…This case is named "MM-SRAM". & SPICE simulation: this method consists in full circuit simulations [8,17]. Using SPICE simulation decreases considerably the simulation time.…”

“…Because the flipping time necessary to calculate the critical charge is not easy to determine, other key parameters, using the current peak value and its time characteristics were explored as the I max -t max or I max -Δt criteria [3,8,12]. However, these criteria would probably not be sufficient for future technologies because they usually only consider simple current injection at one electrode of the device [19].…”

Soft-Error Rate of Advanced SRAM Memories: Modeling and Monte Carlo Simulation

“…Until the I(t) characteristic is computed for all the considered sensitive drains, TIARA-G4 applies the "Imax-tmax" criterion, also described below, to determine if the corresponding memory cell is upset or not. In the diffusion-collection model [39][40], the energy lost by a charged particle in silicon along its track is converted in a succession of elementary carrier densities δQ. The model then assumes that the behavior of these quasi-point charges is governed by a pure 3D spherical diffusion law:…”