Prediction of Plasma Etching Using a Classification-Based Neural Network

Abstract

Qualitative models of plasma etching are essential for understanding physical etch behaviors as well as plasma control. Artificial neural networks ͑ANN͒ have been widely used in constructing predictive etch models. In most applications, the ANN prediction performance has been examined only in terms of the training factors. A technique for building a predictive model is presented here. This is accomplished by applying a neural network to classification data while optimizing the effect of the data boundary. The technique was evaluated with plasma etch data, characterized with a statistical experimental design. The etch response modeled included the etch rates for silica and aluminum ͑Al͒ as well as Al selectivity. Compared to the models for nonclassified data, the classification-based model demonstrated improvement in the prediction errors of 36.3 and 15.8% for the Al and silica etch rates, respectively, while exhibiting a poorer prediction for Al selectivity. However, by controlling the data boundary the Al selectivity model was improved significantly by about 43.8%. Thus, the classification-based modeling technique in conjunction with the control of the data boundary is effective in improving the prediction ability of neural network models.

A Study of Artificial Neural Networks for Electrochemical Data Analysis

“…The ANN has been applied on the controlling or optimization of fabrication processes, [5][6][7][8][9] such as reactive ion etching (RIE), chemical vapor deposition (CVD), and plasma etching, etc. The feasibility of using ANN for peak identification or classification had been studied in various spectroscopy areas, [10][11][12][13][14][15][16][17][18] such as ultraviolet (UV) spectrum, chromatography, and cyclic voltammogram.…”

A Study of Artificial Neural Networks for Electrochemical Data Analysis

“…The ANN has been applied on the controlling or optimization of fabrication processes, [5][6][7][8][9] such as reactive ion etching (RIE), chemical vapor deposition (CVD), and plasma etching, etc. The feasibility of using ANN for peak identification or classification had been studied in various spectroscopy areas, [10][11][12][13][14][15][16][17][18] such as ultraviolet (UV) spectrum, chromatography, and cyclic voltammogram.…”