Prediction of phase formation sequence and phase stability in binary metal-aluminum thin-film systems using the effective heat of formation rule

Pretoriüs, R.; Vredenberg, A. M.; Saris, F.W.; Reus, R. de

doi:10.1063/1.349211

Cited by 264 publications

(103 citation statements)

References 39 publications

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“…The AlAu compound has a MnP-type structure with eight atoms per unit Table 3. Heats of formation (in kJ/mole) of Al x Au y compounds [25] Compound…”

Section: Resultsmentioning

confidence: 99%

XPS study of early stages of Al/Au interface formation

Polyak

Bastl

2009

Surface & Interface Analysis

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The interface formation between Au polycrystalline substrate kept at temperature of liquid nitrogen and Al deposit and its evolution during sample thermal treatments have been investigated by means of XPS. The intermixing of the Al and Au atoms at the interface occurred readily already at temperature of liquid nitrogen and resulted in the appearance of well-resolved components on the high-binding-energy side of the Au(4f) spectra assignable to AlAu intermetallic phase. The sample annealing resulted in the growth of the amount of intermetallic compound formed at liquid nitrogen temperature. The formation of the initial AlAu phase at the Al/Au interface in our experimental conditions can be explained on the basis of its thermodynamic stability.

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“…The AlAu compound has a MnP-type structure with eight atoms per unit Table 3. Heats of formation (in kJ/mole) of Al x Au y compounds [25] Compound…”

Section: Resultsmentioning

confidence: 99%

XPS study of early stages of Al/Au interface formation

Polyak

Bastl

2009

Surface & Interface Analysis

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“…e predicted phase by the effective heat of the formation rule does not necessarily form at the moving reaction interface if it is difficult to nucleate [72]. Many studies showed that [78] applied vacuum hot pressing on Ti/Al laminates followed by annealing and found that the next reaction phase after TiAl 3 was TiAl at the Ti/Al interface after consuming Al layer and during a second-stage annealing treatment at higher temperatures.…”

Section: 2mentioning

confidence: 99%

Low‐Temperature Brazing of Titanium Using Al‐Based Filler Alloys

Muhrat

Puga

Barbosa

2018

Advances in Materials Science and Engineering

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Brazing of titanium using low melting temperature filler alloys is a preferred choice regarding cost and preserving its mechanical properties. However, brazing titanium at low temperature is still a challenge, especially regarding aluminum-based filler alloys. During the last years, several brazing methods and Al-based fillers were developed to meet industrial requirements; some of them might achieve some of those requirements. e use of ultrasound in brazing has gained increased attention recently, which helps to reduce the time and the necessity for a special brazing environment, subsequently, reducing cost and increasing applicability. Brazing titanium below the α↔β transformation temperature, using commercial and experimental Al-based fillers of different compositions, is presented in this review; including the procedures of traditional and ultrasound-assisted brazing methods. Correspondingly, the effects of brazing conditions and alloying elements on the mechanical properties and the intermetallic compounds formation are examined.

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“…7 and 8. The predominant formation of Au 8 Al 3 in the early stages was explained by Pretorius et al 21) using a thermodynamic model. As shown in Fig.…”

Section: Aumentioning

confidence: 99%

Kinetics of Solid-State Reactive Diffusion between Au and Al

Minho

Kajihara

2011

Mater. Trans.

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In the wire bonding technique, a thin Au wire is interconnected with an Al layer on a Si chip. During energization heating at solid-state temperatures, however, brittle Au-Al compounds with high electrical resistivities are formed at the interconnection by the reactive diffusion between Au and Al. In order to examine the growth behavior of the Au-Al compounds, the kinetics of the reactive diffusion was experimentally observed using sandwich Al/Au/Al diffusion couples. The diffusion couple was prepared by a diffusion bonding technique and then isothermally annealed at temperatures of 623-723 K for various times up to 103 h. Under such annealing conditions, the diffusion couple is practically considered semi-infinite. Owing to annealing, compound layers consisting of AuAl 2 , AuAl and Au 8 Al 3 are produced at the initial Au/Al interface in the diffusion couple. The volume fraction in the compound layers is larger for Au 8 Al 3 than for AuAl and AuAl 2 in the early stages but becomes smaller for Au 8 Al 3 than for AuAl and AuAl 2 in the late stages. However, there are no systematic dependencies of the volume fraction on the annealing time and temperature. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is smaller than 0.5 at 673-723 K. The exponent smaller than 0.5 means that the interdiffusion across the compound layers governs the layer growth and boundary diffusion predominantly contributes to the interdiffusion. On the other hand, at 623 K, the exponent is equal to unity for annealing times shorter than 8 h but smaller than 0.5 for those longer than 8 h. The exponent of unity indicates that the layer growth is controlled by the interface reaction at the migrating interface. Thus, at T ¼ 623 K, the transition of the ratecontrolling process occurs at a critical annealing time of 8 h.

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Prediction of phase formation sequence and phase stability in binary metal-aluminum thin-film systems using the effective heat of formation rule

Cited by 264 publications

References 39 publications

XPS study of early stages of Al/Au interface formation

XPS study of early stages of Al/Au interface formation

Low‐Temperature Brazing of Titanium Using Al‐Based Filler Alloys

Kinetics of Solid-State Reactive Diffusion between Au and Al

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