Prediction of error vector magnitude using AM/AM, AM/PM distortion of RF power amplifier for high order modulation OFDM system

Kim, J.H.; Jeong, Jin‐Doo; Kim, S.M.; Park, C.S.; Lee, K.C.

doi:10.1109/mwsym.2005.1517143

Cited by 19 publications

(2 citation statements)

References 2 publications

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“…Some examples are presented in [39][40][41][42][43][44][45] and [39,46,47], respectively. Specialized test benches have been developed and somehow exploited for amplifiers [28,[31][32][33][34][35][36][37]48,49], but not for passive circuits. No reported works explicitly focus on AM/PM characterization of PAS GaN HEMT circuits at such high input power (37 dBm) and frequency ranges (Ku Band, 12 GHz to 18 GHz).…”

Section: Introductionmentioning

confidence: 99%

AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit

Colangeli,

Das,

Longhi

et al. 2023

Electronics

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This contribution presents the AM/AM and AM/PM characteristics of a 6-bit Phase and Amplitude Setting Circuit realized in Gallium Nitride technology and operating at the Ku band. A test bench, based on three vector receivers and an absolute power reference, has been purposely devised to capture the deviation with respect to the linear behavior (known by the S-parameters) for both the magnitude and the phase of the vector response. The complete 64-state constellation is reported up to a 37 dBm of input power level, at which the effects of the static AM/AM and AM/PM distortion become evident, with about 3 dB of gain compression and 2.7 deg of phase conversion. The key figure of merit of the proposed test bench is the capability of operating with very high driving power levels (potentially up to 41 dBm), with possible applications in phased arrays, AESAs, and other signal conditioning systems.

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Section: Introductionmentioning

confidence: 99%

AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit

Colangeli,

Das,

Longhi

et al. 2023

Electronics

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“…The linearity of the PAs can be analyzed by several parameters, including amplitude-to-amplitude modulation (AM-AM), amplitude-to-phase modulation (AM-PM) [20], IMD3 [21], and adjacent channel leakage ratio (ACLR) [22], and error vector magnitude (EVM) [23]. Moreover, the bias point decides the working class of a PA. PAs are usually operated in class-A and AB regions to meet the stringent linearity requirements.…”

Section: Introductionmentioning

confidence: 99%

A 919 MHz—923 MHz, 21 dBm CMOS Power Amplifier With Bias Modulation Linearization Technique Achieving PAE of 29% for LoRa Application

Rawat

Rajendran

Mariappan³

et al. 2022

IEEE Access

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This paper presents a bias modulation linearization technique for a 919-923 MHz CMOS power amplifier which employs driver voltage modulation and main amplifier split bias. Through the proposed linearization technique, it is observed that the peak third-order intercept point (OIP3) across the output power is shifting according to the bias conditions of the split-bias power amplifier (SBPA). The third-order transconductance (gm3) terms are suppressed at the output by phase cancellation achieved by optimization of the bias voltages of the PA. A high dynamic range bias circuit is integrated at the driver and split main to enhance the linearity of the CMOS PA, eradicating the need for pre-distortion linearizers. The two-stage SBPA is designed and fabricated in a 180 nm CMOS process with six-metal layers and a chip size of 1.820 x 1.771 mm 2 to operate at the supply voltage of 3.3 V. The bias voltages of both driver and split main stages are varied from 0 V to 2.0 V with a linear step size of 0.2 V. The proposed SBPA delivers a saturated output power (Pout) of 27 dBm with maximum power-added efficiency (PAE) of 44.4 % and peak OIP3 of 39 dBm. A maximum linear Pout of 21 dBm with 29 % PAE is achieved at an adjacent channel leakage ratio (ACLR) of -30 dBc and 4 % error vector magnitude (EVM), satisfying the LoRa specifications.INDEX TERMS Adjacent channel leakage ratio (ACLR), bias circuit, complementary metal-oxidesemiconductor (CMOS), error vector magnitude (EVM), intermodulation distortion (IMD), long-range (LoRa), power amplifier, radio frequency power amplifier (RFPA), third-order intercept point (OIP3)

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Error Vector Magnitude Analysis for OFDM Systems

Zhao

Baxley

2006

2006 Fortieth Asilomar Conference on Signals, Systems and Computers

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Prediction of error vector magnitude using AM/AM, AM/PM distortion of RF power amplifier for high order modulation OFDM system

Cited by 19 publications

References 2 publications

AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit

AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit

A 919 MHz—923 MHz, 21 dBm CMOS Power Amplifier With Bias Modulation Linearization Technique Achieving PAE of 29% for LoRa Application

Error Vector Magnitude Analysis for OFDM Systems

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