Prediction of a new two-dimensional valleytronic semiconductor MoGe₂P₄ with large valley spin splitting

Abstract

Recently, MoSi2N4 with large valley spin splitting was experimentally synthesized. However, materials with large valley spin splitting are still rare. We predict a new two-dimensional(2D) MoGe2P4 material. It has large...

Valleytronics in two-dimensional magnetic materials

“…In comparison with its parent material, the Janus structure has unique novel properties such as larger piezoelectric effect and it is more controllable, due to the breaking of the mirror symmetry in the out-of-plane direction. The main Janus ferrovalley materials that have been investigated theoretically are: VXY [110][111][112][113][114][115][116], FeXY [117], RuClX [118,119], GdXY [120,121], TiXY [122,123], ScBrI [124], LaBrI [125], YBrI [126], TaNF [127], OsClBr [128], Fe 2 SSe [129], VSiGeN 4 [130][131][132], VCSiN 4 [133], MSiGeZ 4 [134], Mn 2 P 2 X 3 Y 3 [135] and so on (M is transition metal element Cr and W; X, Y are non-metallic elements and X ̸ = Y).…”

Rashba effect: a chemical physicist's approach

“…[45][46][47][48][49][50] However, it also delves into GSS induced in novel 2D layered materials, including transition-metal dichalcogenides (TMDs), [51][52][53][54][55][56][57] MXenes, [58][59][60][61][62][63] and a variety of other sheets. [64][65][66][67][68][69][70][71][72] To facilitate the ongoing efforts, it is crucial to develop more robust strategies for enhancing spin splitting. Clear guiding principles need to be established to design materials with desired GSS.…”

“…45–50 However, it also delves into GSS induced in novel 2D layered materials, including transition-metal dichalcogenides (TMDs), 51–57 MXenes, 58–63 and a variety of other sheets. 64–72…”

Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe2P4–Metal Contacts

“…22 Besides, the MoGe 2 P 4 monolayer is both dynamically and mechanically stable, which is much better than that of black phosphorene. 23 Based on these excellent properties, the MoGe 2 P 4 monolayer can be proposed as a promising channel material for high-performance electronic devices.…”

“…Two-dimensional (2D) semiconductors, such as graphene, transition metal dichalcogenides (TMDs), and black phosphorene (BP), have exhibited potential applications in field effect transistors (FETs). − However, their practical applications still have some limitations, such as the zero-band gap in graphene, , poor environmental stability in BP, , and low carrier mobility in TMDs. , MoSi 2 N 4 and WSi 2 N 4 monolayers, recently synthesized by the chemical vapor deposition (CVD), have shown the potential to realize high-speed and low-power consumption devices due to the suitable band gap, high carrier mobility, and outstanding environmental stability. − Another MoSi 2 N 4 family material, the MoGe 2 P 4 monolayer, has attracted much attention due to its suitable band gap (0.5 eV) and outstanding carrier mobility (exceeding 10 3 cm 2 V –1 s –1 ), which is higher than those of the recently reported MoSi 2 N 4 /WSi 2 N 4 . Besides, the MoGe 2 P 4 monolayer is both dynamically and mechanically stable, which is much better than that of black phosphorene . Based on these excellent properties, the MoGe 2 P 4 monolayer can be proposed as a promising channel material for high-performance electronic devices.…”