2010
DOI: 10.1117/12.845008
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Predicting reliability of silicon MEMS

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Cited by 4 publications
(3 citation statements)
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“…The silicon device layer of the SOI wafer is also etched by DRIE based on the Bosch process [18][19][20]. SF 6 and C 4 F 8 gases are used for etching and passivation, respectively.…”
Section: Nbe Etching Results and Discussionmentioning
confidence: 99%
“…The silicon device layer of the SOI wafer is also etched by DRIE based on the Bosch process [18][19][20]. SF 6 and C 4 F 8 gases are used for etching and passivation, respectively.…”
Section: Nbe Etching Results and Discussionmentioning
confidence: 99%
“…Alissa M. Fitzgerald proposed the first reliability quantification model for a general MEMS structure in 2009. Through the integration of failure probability on each surface of the MEMS structure, the overall reliability of the structure is obtained [119,120]. In 2011, Fitzgerald's model was further explored by proposing the concept of structural failure probability density (FPI).…”
Section: • Reliability Quantification For General Structuresmentioning
confidence: 99%
“…It can simulate the mechanical overload conditions that could develop, for instance, during the screen printing on silicon membrane arrays. The present setup employs modified bond test equipment with a design similar to that used by Fitzgerald et al to apply torsion loads on MEMS micromirrors [ 52 ]. A clear advantage of this setup over bulge testing [ 49 , 50 , 51 ] is its compatibility with automated test methods.…”
Section: Introductionmentioning
confidence: 99%