Predicting power–voltage characteristics and mode transitions in the COST reference microplasma jet

Abstract

A 2D cross-field plasma fluid model (CFPM) is applied to He and He/O2 discharges in the COST reference microplasma jet to investigate the operating modes, namely α-, α-γ, and γ-mode. The model not only captures the measured spatiotemporal behavior of He excitation to He metastable but also quantitatively predicts measured power – voltage (PV) characteristics for He/O2 discharges; although not addressed by previous studies, this is a prerequisite for the reliability of the model predictions for the critical-for-applications densities of reactive species. Through a comparison to time-averaged emission profiles and allowed by the dimensionality of the CFPM, the localized, close to the outlet of the discharge channel, onset of γ-mode for He discharges is predicted and justified. Τhe sheath boundary is defined by the maximum of the electron density derivative and the model results compare well to measurements of time-averaged sheath width. Criteria for the transition between the operating modes are formulated. It is considered that when the production rate of He metastable in the sheaths reaches 10% of its total production rate, transition from α- to α-γ mode takes place. When this percentage reaches ~50%, i.e. α- and γ- modes have an almost equal contribution to the discharge, the electron temperature becomes maximum. Finally, the sensitivity of PV characteristics on the secondary electron emission coefficients, condition of the electrode surface, and fabrication or assembly mishits of the COST jet, is investigated.

Ozone production by an He+O2 radio-frequency atmospheric pressure plasma jet driven by tailored voltage waveforms

“…Increasing the driving voltage amplitude eventually transitions the discharge into a constricted mode, characterised by filamentary behaviour. In this mode, ionisation is confined to the strongly contracted sheath regions [39,40]. Operating APPJs in the constricted mode is best avoided, as the high gas temperature and current density pose a risk of thermal damage to the device and/or substrate [11,38].…”