2019
DOI: 10.1016/j.cossms.2019.06.001
|View full text |Cite
|
Sign up to set email alerts
|

Predicting damage production in monoatomic and multi-elemental targets using stopping and range of ions in matter code: Challenges and recommendations

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
57
0
1

Year Published

2019
2019
2023
2023

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 184 publications
(59 citation statements)
references
References 69 publications
1
57
0
1
Order By: Relevance
“…Displaced atom profiles and energy deposition profiles were calculated using SRIM 2013 software in a full-cascade mode to estimate the damage dose in displacements per atom ( Figure S4, Supporting information), assuming a film density of 8.356 g•cm −3 with a threshold displacement energy of 40 eV for all the constituent elements. [46] The theoretical density of the solid-solution alloy was roughly estimated from the atomic fraction, atomic weight, and density of each constituent element. Regions at a depth of around 500 nm were chosen for microstructural characterization, and the average damage dose at this depth was 0.7, 4.5, 24, 125, and 370 dpa, respectively, for the ion fluences in this study.…”
Section: Methodsmentioning
confidence: 99%
“…Displaced atom profiles and energy deposition profiles were calculated using SRIM 2013 software in a full-cascade mode to estimate the damage dose in displacements per atom ( Figure S4, Supporting information), assuming a film density of 8.356 g•cm −3 with a threshold displacement energy of 40 eV for all the constituent elements. [46] The theoretical density of the solid-solution alloy was roughly estimated from the atomic fraction, atomic weight, and density of each constituent element. Regions at a depth of around 500 nm were chosen for microstructural characterization, and the average damage dose at this depth was 0.7, 4.5, 24, 125, and 370 dpa, respectively, for the ion fluences in this study.…”
Section: Methodsmentioning
confidence: 99%
“…The energy of self-ion irradiation was chosen so as to match the thickness of SiC epilayers. Following recent recommendations, 33 full cascade simulations are performed for the SiC/Si sample and yield R p =1.32 ± 0.16 μm ( Figure 1) using densities of 3.21 g cm −3 for SiC and 2.33 g cm −3 for Si. The Si ions are transmitted through the SiC film and stopped in the Si substrate with a damage peak at ~200 nm below the SiC/Si interface ( Figure 1, inset).…”
Section: Methodsmentioning
confidence: 99%
“…However, it is to be noted that S e values may also be overestimated for slow light ion irradiation of targets containing light elements, such as SiC and Si. 33 For the incident 82-keV u −1 28 Si ion energy, the CASP 5.0 code 65 actually yields a total stopping power of ~4.3 × 10 −13 eV cm 2 per SiC molecule using ionization of the 1 s, 2 s, 2p, 3 s, and 3p shells, which gives S e ~2.1 MeV µm −1 (for a molar mass of 40 g and mass density of 3.21 g cm −3 ) instead of 2.9 MeV µm −1 as computed by SRIM2013. The DPASS 2.11 code 66 gives ~3.9 × 10 −13 eV cm 2 for Si and ~2.5 × 10 −13 eV cm 2 for C, that is, S e ~6.4 × 10 −13 eV cm 2 ~3.2 MeV µm −1 using the Bragg's additivity rule.…”
Section: Threshold Irradiation Doses For Amorphization and Dislocatmentioning
confidence: 99%
“…In the SRIM calculations, a threshold displacement energy of 40 eV was assumed for all the constituent elements. 20 Recent studies 21,22 show that ion-induced damage in both monoatomic and multi-elemental targets with a significant mass difference should be predicted using the full-cascade simulations, as the For 200 keV He ions in NiFe, the conversion factor from ion fluence (10 14 cm -2 ) to peak damage in dpa, based on the full-cascade versus quick TRIM, is 0.0061 or 0.0024 at a depth of ~ 495 nm, respectively.…”
Section: Damage Profile Predictionmentioning
confidence: 99%