Predicted maximum mobility in bulk GaN

Look, David C.; Sizelove, J. R.

doi:10.1063/1.1394954

Cited by 96 publications

(57 citation statements)

References 19 publications

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“…4,5 Studying such crystals is also very interesting from a purely scientific viewpoint because it provides access to reasonably low dislocation density material which makes it possible to separately study the impact of point defects and dislocations on the electrical and recombination properties of n-GaN. Preliminary measurements of electrical properties ͑e.g., Schottky barrier height͒, 6 deep level spectra, 6 defect structure by transmission electron microscopy ͑TEM͒, 4 and luminescence properties 7 have shown the existence of interesting differences in characteristics of the upper, low-dislocation-density Ga side, and the lower, higher-dislocation-density N side.…”

Section: ϫ2mentioning

confidence: 99%

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

Polyakov

Smirnov

Говорков

et al. 2002

Journal of Applied Physics

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Deep level electron and hole traps were studied by means of deep level transient spectroscopy with electrical and optical injection on a freestanding thick n-GaN sample with low dislocation density. It is shown that at both the upper and the lower surface of the sample there exists a thin, ϳ0.5 m layer of damaged material with lowered concentration of electrons and enhanced density of deep centers. Deep in the bulk of the film the densities of the majority of the electron and hole traps are shown to be very low, but measurably higher on the lower face ͑N face͒, which was originally closer to the Al 2 O 3 substrate. The two faces are also shown to similarly differ in the density of deep hole traps whose concentration is deduced from low-temperature capacitance-voltage measurements in the dark and after illumination ͑such traps were previously associated with dislocation states͒. The concentration of persistent photocapacitance centers is shown to be very low on both sides and considerably lower than previously reported for other n-GaN samples with higher dislocation densities. Electron beam induced current measurements on both sides of the sample reveal the presence of dark spots whose density roughly correlates with the density of dislocations at the upper and lower faces. The reverse current at high voltages is shown to be considerably higher on the N face. The possible relationship of the observed phenomena to dislocations is discussed.

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Section: ϫ2mentioning

confidence: 99%

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

Polyakov

Smirnov

Говорков

et al. 2002

Journal of Applied Physics

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“…Freestanding GaN wafers, i.e., wafers grown on a sapphire substrate and then separated from the wafer, have recently demonstrated the highest mobility ever measured in bulk GaN, 1 as well as excellent optical and structural properties. 2,3 However, many of the sharp photoluminescence ͑PL͒ lines that appear have not been identified, as yet.…”

Section: Introductionmentioning

confidence: 99%

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

et al. 2002

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The neutral donor bound exciton recombination processes in freestanding GaN have been studied. The photoluminescence spectrum shows emission lines related to silicon and oxygen donors. Time-resolved luminescence allows us to correlate the principal donor bound exciton lines with their two-electron satellites. The magnetic field splitting of the two-electron lines is well described by the theory of the hydrogen atom in a magnetic field. For the oxygen donor a 1.5 meV chemical shift and a 30.8 meV effective Rydberg have been evaluated. Two-electron satellites involving excitations to the 2p and 2s donor states are separated by an energy of 1.0 and 1.3 meV for O and Si impurity, respectively. The temperature dependence of the two-electron emission clearly shows that this separation arises from a splitting of the ground state of the neutral donor bound exciton complex. The nature of this splitting is discussed and it is suggested that it is due to rotational states of donor bound excitons.

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“…The highest reported mobility for MOCVD grown GaN was ~ 900 cm 2 /Vs . The maximum calculated phonon-limited mobility in GaN is ~1350 cm 2 /Vs for electrons and ~200 cm 2 /Vs for holes (Look, et al 2001). Light n type doping of GaN (~1  10 17 /cm 3 ) results in improved mobility due to screening of dislocations and decreased defect-related conductivity.…”

Section: Important Properties Of Iii-nitride Materialsmentioning

confidence: 99%