Precursors for chemical vapor deposition of tungsten oxide and molybdenum oxide

Ou, Nathan C.; Su, Xiaoming; Bock, Duane C.; McElwee‐White, Lisa

doi:10.1016/j.ccr.2020.213459

Cited by 23 publications

(9 citation statements)

References 114 publications

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“…48 These coreactant pairs include MoO 3 /H 2 S, 46 MoCl 5 /H 2 S, 47 Mo(CO) 6 /H 2 S, 49 Mo (CO) 6 /Et 2 S, 50 Mo(CO) 6 /CS 2 , 51 and Na 2 MoO 4 /Et 2 S. 48 An alternative approach is to deposit materials using a single-source precursor where a single compound contains all the elements found in the film. [52][53][54][55] The first reported single source precursor was the tetrakis(t-butylthiolato) complex Mo (S t Bu) 4 , which could be used for growth of MoS 2 at low temperatures between 110 and 350 °C with minimal contamination of C from the ligands. 56 The molybdenum dithiocarbamate complex Mo(Et 2 NCS 2 ) 4 has been used as a precursor for CVD of MoS 2 at 400 °C, 57 as well as for conversion to MoS 2 by pyrolysis 58 and air-spray deposition.…”

Section: Introductionmentioning

confidence: 99%

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films

et al. 2022

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Section: Introductionmentioning

confidence: 99%

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films

et al. 2022

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“…Critically, what both techniques require is access to suitable molecular precursors. − Even though this need has motivated the search for and discovery of a number of Mo precursors for ALD and/or CVD, ,,− a number of which are now commercially available, − there is still a vast disparity between the amount of Mo-based materials work being done and the availability of diverse molecular starting materials. Thus, there is a continuing need to discover new molecular building blocks which can enable different vapor phase growth processes over broad temperature ranges and with a variety of co-reactants.…”

Section: Introductionmentioning

confidence: 99%

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

Shaw

Ali

Currie

et al. 2023

ACS Appl. Mater. Interfaces

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The synthesis, characterization, and thermogravimetric analysis of tris(N,N′-di-isopropylacetamidinate)molybdenum(III), Mo-(iPr-AMD) 3 , are reported. Mo(iPr-AMD) 3 is a rare example of a homoleptic mononuclear complex of molybdenum(III) and fills a longstanding gap in the literature of transition metal(III) trisamidinate complexes. Thermogravimetric analysis (TGA) reveals excellent volatilization at elevated temperatures, pointing to potential applications as a vapor phase precursor for higher temperature atomic layer deposition (ALD), or chemical vapor deposition (CVD) growth of Mo-based materials. The measured TGA temperature window was 200−314 °C for samples in the 3−20 mg range. To validate the utility of Mo(iPr-AMD) 3 , we demonstrate aerosol-assisted CVD growth of MoO 3 from benzonitrile solutions of Mo(iPr-AMD) 3 at 500 °C using compressed air as the carrier gas. The resulting films are characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. We further demonstrate the potential for ALD growth at 200 °C with a Mo(iPr-AMD) 3 /Ar purge/300 W O 2 plasma/Ar purge sequence, yielding ultrathin films which retain a nitride/oxynitride component. Our results highlight the broad scope utility and potential of Mo(iPr-AMD) 3 as a stable, high-temperature precursor for both CVD and ALD processes.

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“…[20] Particularly in the case of tungsten, the number of available metalorganic CVD (MOCVD) precursors is limited. A comprehensive overview of tungsten precursors for tungsten oxide can be found in the recent review article by Ou et al [21] Based on literature reports, one of the first CVD processes for tungsten oxide was developed by Hardee et al [22] using halide containing tungsten complexes at evaporation temperatures of 240 °C for tungsten hexachloride (WCl 6 ) or room temperature for tungsten hexaflouride (WF 6 ) which is gaseous at this temperature. Resulting layers could be contaminated with halogen impurities and the by-products can etch the substrate surface or reactor parts all of which could profoundly affect the functional properties.…”

Section: Introductionmentioning

confidence: 99%

“…A comprehensive overview of tungsten precursors for tungsten oxide can be found in the recent review article by Ou et al. [ 21 ] Based on literature reports, one of the first CVD processes for tungsten oxide was developed by Hardee et al. [ 22 ] using halide containing tungsten complexes at evaporation temperatures of 240 °C for tungsten hexachloride (WCl 6 ) or room temperature for tungsten hexaflouride (WF 6 ) which is gaseous at this temperature.…”

Section: Introductionmentioning

confidence: 99%

CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications

Wilken

Çiftyürek

Cwik

et al. 2022

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a wide bandgap of 2.68 eV [6] and electrical conductivities ranging between 10 −6 to 10 −4 (Ω cm −2 ) [7] Various stable oxides and suboxides of tungsten can exist on the surface such as WO, WO 2 , W 2 O 3 , W 4 O 3 , W 17 O 47 , W 18 O 49 , and WO 3 (in an oxygen-deficient form WO 3−x ). [8] Here, the oxidation states of tungsten varies from +II to +VI. [9] Owing to this range of possible stoichiometries accompanied by charged surface defects, tungsten oxide preserves typical n-type semiconducting behavior and thus, catalytic activity toward different gases, enabling application in chemical gas sensors. [1,10] Sensors employing tungsten oxide (WO 3 ) in several micro-and nanostructures were used for the detection of a variety of gases such as, sulfur dioxide (SO 2 ), [11] hydrogen sulfide (H 2 S), [11,12] ozone (O 3 ), [12] nitrogen oxide (NO x ), [12][13][14] dimethylacetamide (DMAC, Me(CO)NMe 2 ), [12] trimethylamine (NMe 3 ), [15] acetone, [14] ammonia (NH 3 ), [12] oxygen (O 2 ) [9] and water (H 2 O). [9,14] In particular for hydrogen (H 2 ), [12,16] tungsten oxide has shown good sensing properties highlighting the interest of this material, as hydrogen is as an attractive source for renewable energy due to its naturally exhaustible by-products (H 2 O) without filtration. However, there are some challenges and one of them is to develop efficient procedures for H 2 storage. Due to its almost instantaneous diffusion rate, comfort in penetration through almost all materials, the development of dedicated safety measures to monitor storage and flow systems is equally important.

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Precursors for chemical vapor deposition of tungsten oxide and molybdenum oxide

Cited by 23 publications

References 114 publications

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications

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Precursors for chemical vapor deposition of tungsten oxide and molybdenum oxide

Cited by 23 publications

References 114 publications

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS2 thin films

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS2 thin films

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications

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Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films