Precursor design and impact of structure on the fabrication of materials

Bhide, Malavika A.; Mears, Kristian L.; Carmalt, Claire J.; Knapp, Caroline E.

doi:10.1016/b978-0-12-820340-8.00014-9

Cited by 2 publications

(2 citation statements)

References 196 publications

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“…While the decomposition temperature of 3 is promising, the mass loss is less than satisfactory, producing either aluminium metal or aluminium oxide films with considerable carbon contamination. Compound 3 likely decomposes at lower temperatures than the other octaheadral analogues due to the isopropyl N‐substituents being the bulkiest among the six‐coordinated complexes and, as such, yielding a more distorted octaheadral geometry around the metal, so it requires less energy for decomposition [55] . Accordingly, while complexes 3 – 5 are good candidates as precursors for the deposition of aluminium oxide, they are not suitable for depositions onto temperature sensitive substrates.…”

Section: Resultsmentioning

confidence: 99%

Tris(β‐ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors

et al. 2023

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Precursor design is the crucial step in tailoring the deposition profile towards a multitude of functional materials. Most commercially available aluminium oxide precursors require high processing temperatures (>500 °C). Herein, we report the tuning of the decomposition profile (200–350 °C) of a range of octahedrally coordinated tris(β‐ketoiminate) aluminium complexes of the type [Al(MeCN(R)CHC=OMe)3], by varying the R substituents in the ligands. The complexes are derived from the reaction of trimethylamine alane (TMAA) and a series of N‐substituted β‐ketoiminate ligands (R‐acnacH, R=Me, Et, iPr, Ph) with varying R‐substituents sizes. When the more sterically encumbered ligand (R=Mes) was used, the Al atom became five‐coordinate, therefore representing the threshold to octahedral coordination around the metal in these type of compounds, which, consequently, lead to a change of decomposition profile. The resulting compounds have been characterised by NMR spectroscopy, mass spectrometry, elemental analysis and single crystal X‐ray diffraction. [Al(MeCN(Me)CHC=OMe)3] has been used as a single source precursor for the deposition of Al2O3. Thin films were deposited via aerosol assisted chemical vapour deposition (AACVD), with toluene as the solvent, and were analysed using SEM, EDX and XPS.

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Section: Resultsmentioning

confidence: 99%

Tris(β‐ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors

et al. 2023

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“…τ values can give insight into the suitability of these compounds as precursors; higher distortion in precursors has previously been correlated with a reduction in decomposition temperature. [ 42 ] This would suggest that compound 2, with maximum distortion, would display the lowest decomposition temperature.…”

Section: Probing the Relationship Between Structure And Stabilitymentioning

confidence: 99%

Unraveling the Steric Link to Copper Precursor Decomposition: A Multi‐Faceted Study for the Printing of Flexible Electronics

et al. 2023

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The field of printed electronics strives for lower processing temperatures to move toward flexible substrates that have vast potential: from wearable medical devices to animal tagging. Typically, ink formulations are optimized using mass screening and elimination of failures; as such, there are no comprehensive studies on the fundamental chemistry at play. Herein, findings which describe the steric link to decomposition profile: combining density functional theory, crystallography, thermal decomposition, mass spectrometry, and inkjet printing, are reported. Through the reaction of copper(II) formate with excess alkanolamines of varying steric bulk, tris-co-ordinated copper precursor ions: "[CuL 3 ]," each with a formate counter-ion (1-3) are isolated and their thermal decomposition mass spectrometry profiles are collected to assess their suitability for use in inks (I 1-3 ). Spin coating and inkjet printing of I 1,2 provides an easily up-scalable method toward the deposition of highly conductive copper device interconnects (𝝆 = 4.7-5.3 × 10 −7 𝛀 m; ≈30% bulk) onto paper and polyimide substrates and forms functioning circuits that can power light-emitting diodes. The connection among ligand bulk, coordination number, and improved decomposition profile supports fundamental understanding which will direct future design.

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Precursor design and impact of structure on the fabrication of materials

Cited by 2 publications

References 196 publications

Tris(β‐ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors

Tris(β‐ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors

Unraveling the Steric Link to Copper Precursor Decomposition: A Multi‐Faceted Study for the Printing of Flexible Electronics

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