Precision Programming Power Control in Embedded P-channel SONOS Flash using Transient-IV Method

Chen, Y. J.; Ting, Y. J.; Liu, C. J.; Sun, Wein–Town; Shen, Ruowen

doi:10.7567/ssdm.2009.p-4-4

Cited by 3 publications

(2 citation statements)

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“…5. Besides, the programming current measured by Transient-IV technique [4] also reveals that several times of power consumption is saved compared with the conventional one shown in Fig. 6.…”

Section: Resultsmentioning

confidence: 95%

A highly reliable embedded p-channel SONOS memory using dynamic programming method

Chen¹,

Liu²,

Lo³

et al. 2011

2011 International Reliability Physics Symposium

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In this paper we propose a dynamic programming scheme in p-channel SONOS operation in order to achieve high reliability and scalability. By adopting the new method, cell can perform better writing efficiency and suffer less oxide degradation than the conventional CHE programming. Besides, the low programming current under the low program bias also makes simple circuitry design and small charge pumping area.

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Section: Resultsmentioning

confidence: 95%

A highly reliable embedded p-channel SONOS memory using dynamic programming method

Chen¹,

Liu²,

Lo³

et al. 2011

2011 International Reliability Physics Symposium

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show abstract

“…In order to characterize the current and transient voltage drop on BL side during programming, a transient-IV measurement system with the current amplifier to clamp the programming current is shown in Fig. 3 [5]. The voltage drop at the virtual ground (VG) node and transient channel current in course of programming can be monitored simultaneously.…”

Section: Methodsmentioning

confidence: 99%

A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory

Fang¹,

Chen²,

Liu³

et al. 2012

2012 4th IEEE International Memory Workshop

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A dynamic programming method of Channel Hot Hole Induced Hot Electron (CHHIHE) injection with programming-current-clamped (PCC) scheme on P-channel SONOS application is proposed in this paper. With the PCC scheme, a better programming efficiency and device reliability can be realized, and consequently up to 85% programming current reduction and over one order of retention lifetime improvement can be achieved. Moreover, it can also provide a tightened program state distribution with the benefit of lower programming power consumption, smaller high voltage pumping circuit area and better read sensing window.

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Low-cost embedded Flash memory technology

Sun¹,

Liu²,

Lo³

et al. 2011

2011 IEEE International Conference on IC Design &Amp; Technology

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Precision Programming Power Control in Embedded P-channel SONOS Flash using Transient-IV Method

Cited by 3 publications

References 0 publications

A highly reliable embedded p-channel SONOS memory using dynamic programming method

A highly reliable embedded p-channel SONOS memory using dynamic programming method

A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory

Low-cost embedded Flash memory technology

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