International Conference on Extreme Ultraviolet Lithography 2019 2019
DOI: 10.1117/12.2536874
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Precision fabrication of EUVL programmed defects with helium ion beam lithography

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“…The direct-write HIB milling process can then pattern 1.5 nm structures by correcting the proximity effect. It can offers a promising alternative method for fabricating programmed defects and test structures for sub-7 nm advanced metrology solutions [66,67].…”
Section: Milling For 3d Nanostructuresmentioning
confidence: 99%
“…The direct-write HIB milling process can then pattern 1.5 nm structures by correcting the proximity effect. It can offers a promising alternative method for fabricating programmed defects and test structures for sub-7 nm advanced metrology solutions [66,67].…”
Section: Milling For 3d Nanostructuresmentioning
confidence: 99%