Precise localization of contaminants in graphene with secondary ion mass spectrometry

Michałowski, Paweł Piotr; Kozdra, Sylwia; Pasternak, Iwona; Sitek, Jakub; Wójcik, Adrianna; Strupiński, Włodek

doi:10.1016/j.measurement.2021.110308

Cited by 8 publications

(2 citation statements)

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“…SIMS measurements were performed employing the CAMECA SC Ultra instrument equipped with an RF plasma O 2 + primary ion source. To achieve atomic depth resolution, a high incident angle bombardment (75 • ) was used, and the details of such experiments are presented elsewhere [72].…”

Section: Characterizationmentioning

confidence: 99%

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

et al. 2022

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Van der Waals heterostructures (vdWHS) provide a unique playground to study fundamental physics and practical applications of two-dimensional (2D) materials. However, most 2D heterostructures are prepared by transfer, hindering their technological implementation. Here, we report the first chemical vapour deposition (CVD) of monolayered MoS2/WS2/graphene vertical vdWHS without transfer step. By atomic force microscopy, photoluminescence, Raman spectroscopy, and secondary ion mass spectroscopy, we confirmed the vertical stacking of three different 2D materials. The use of WS2, graphene, and sapphire as growth substrates allowed us to describe the 2D materials growth process better. We determined that for the synthesis of 2D materials, only the chemical potential of the crystal formation and the substrate-layer adhesion energy are relevant factors. In addition, we used MoS2/WS2/graphene vdWHS to fabricate a photoresponsive memory device, showing the application potential of such heterostacks. Our results clarify the growth mechanisms of 2D materials and pave the way for the growth of more complex van der Waals heterostructures.

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Section: Characterizationmentioning

confidence: 99%

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

et al. 2022

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“…Therefore, these values are not used further. In order to investigate this contradiction Secondary Ion Mass Spectrometry (SIMS) analyses were carefully done at the 4H-SiC/Ti3SiC2-interface of sample A by using a CAMECA IMS SC Ultra SIMS tool which allows a sub-nm resolution [28,29]. The sub-nm depth resolution was achieved for O 2+ primary ions with an impact energy of 250 eV.…”

Section: Determination Of Schottky Barrier Heightmentioning

confidence: 99%

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

et al. 2021

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Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.

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From DFT investigations of oxygen-implanted molybdenum disulfide to temperature-induced stabilization of MoS2/MoO3 heterostructure

Kozdra

Wójcik

Das

et al. 2023

Applied Surface Science

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Precise localization of contaminants in graphene with secondary ion mass spectrometry

Cited by 8 publications

References 69 publications

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

From DFT investigations of oxygen-implanted molybdenum disulfide to temperature-induced stabilization of MoS2/MoO3 heterostructure

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Precise localization of contaminants in graphene with secondary ion mass spectrometry

Cited by 8 publications

References 69 publications

Three-step, transfer-free growth of MoS2/WS2/graphene vertical van der Waals heterostructure

Three-step, transfer-free growth of MoS2/WS2/graphene vertical van der Waals heterostructure

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

From DFT investigations of oxygen-implanted molybdenum disulfide to temperature-induced stabilization of MoS2/MoO3 heterostructure

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Product

Resources

About

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure

Three-step, transfer-free growth of MoS₂/WS₂/graphene vertical van der Waals heterostructure