Precise etch-depth control of microlens-integrated intracavity contacted vertical-cavity surface-emitting lasers by in-situ laser reflectometry and reflectivity modeling

Song, Young Min; Chang, Ki Soo; Na, B.H.; Yu, Jae Su; Lee, Y.T.

doi:10.1016/j.tsf.2009.03.198

Cited by 10 publications

(5 citation statements)

References 14 publications

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“…Thus, point-measurement techniques such as spectroscopic ellipsometry, 1-4 phase-sensitive ellipsometry, 5 laser reflectometry, 6,7 multi-beam interferometry, 8,9 and emission spectroscopy 10,11 have been successfully implemented. Typically, the structure height is measured at a single point or region of interest and information across the wafer is inferred assuming the process is uniform.…”

Section: Introductionmentioning

confidence: 99%

Optically monitoring and controlling nanoscale topography during semiconductor etching

et al. 2012

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We present epi-diffraction phase microscopy (epi-DPM) as a non-destructive optical method for monitoring semiconductor fabrication processes in real time and with nanometer level sensitivity. The method uses a compact Mach-Zehnder interferometer to recover quantitative amplitude and phase maps of the field reflected by the sample. The low temporal noise of 0.6 nm per pixel at 8.93 frames per second enabled us to collect a three-dimensional movie showing the dynamics of wet etching and thereby accurately quantify non-uniformities in the etch rate both across the sample and over time. By displaying a gray-scale digital image on the sample with a computer projector, we performed photochemical etching to define arrays of microlenses while simultaneously monitoring their etch profiles with epi-DPM.

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Section: Introductionmentioning

confidence: 99%

Optically monitoring and controlling nanoscale topography during semiconductor etching

et al. 2012

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“…The problem of misalignment of the cavity-mode wavelength of the emitter and RCEPD, however, significantly affects the system performance [30,[33][34][35]. As shown in Figure 1(b), misaligned operating wavelengths between the VCSEL and RCEPD can be changed by etching the top most layer of RCEPD [33,36]. However, the conventional RCEPD spectral response shapes are triangular, which affects the sensitivity of system performance because of the extremely narrow spectra of the VCSELs (Figure 1(c)).…”

Section: Flat Top Response Of Rcepdmentioning

confidence: 99%

Recent Approaches for Broadening the Spectral Bandwidth in Resonant Cavity Optoelectronic Devices

Park

et al. 2015

Advances in Condensed Matter Physics

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Resonant cavity optoelectronic devices, such as vertical cavity surface emitting lasers (VCSELs), resonant cavity enhanced photodetectors (RCEPDs), and electroabsorption modulators (EAMs), show improved performance over their predecessors by placing the active device structure inside a resonant cavity. The effect of the optical cavity, which allows wavelength selectivity and enhancement of the optical field due to resonance, allows the devices to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. However, the narrow spectral bandwidth significantly reduces operating tolerances, which leads to severe problems in applications such as optical communication, imaging, and biosensing. Recently, in order to overcome such drawbacks and/or to accomplish multiple functionalities, several approaches for broadening the spectral bandwidth in resonant cavity optoelectronic devices have been extensively studied. This paper reviews the recent progress in techniques for wide spectral bandwidth that include a coupled microcavity, asymmetric tandem quantum wells, and high index contrast distributed Bragg-reflectors. This review will describe design guidelines for specific devices together with experimental considerations in practical applications.

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“…As seen in the figure, our target requires a superior fabrication technique compared with the existing GaAs=AlGaAs optical devices such as air-bridge PCs and the vertical-cavity surfaceemitting laser (VCSEL) system. [9][10][11][12] Reports on this technique are very limited and thus the etching mechanism has not yet been substantially discussed. 13) Recently, we have reported a PC structure with air holes deeper than 1.5 µm and a diameter of 120 nm fabricated using SiO 2 as the mask layer.…”

Section: Introductionmentioning

confidence: 99%

Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication

Zhang¹,

Togano²,

Hashimura³

et al. 2015

Jpn. J. Appl. Phys.

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We investigate inductively coupled plasma (ICP) deep dry etching of Al0.8Ga0.2As for photonic crystal (PC) fabrication using a Cl2/BCl3/CH4 gas mixture. On the basis of our previous report [Y. Kitabayashi et al., Jpn. J. Appl. Phys. 52, 04CG07 (2013)], we obtained a PC structure having air holes deeper than 1.5 µm and a diameter of 120 nm by adjusting the gas flow rate and increasing the process pressure. In this study, silicon nitride (SiNx) and SiO2 were both used as the mask layer. Furthermore, samples with SiNx and SiO2 masks for ICP deep dry etching were also fabricated and compared. The vertical profile of the PC structure with the SiNx mask layer displayed a rounded shape that was caused by the charge up in the mask layer. Then, a thinner mask layer was used to ease the effects of mask retardation and charge up. As a result, a PC structure with a SiNx mask layer having air holes deeper than 1.7 µm and a diameter of 190 nm was successfully fabricated.

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Precise etch-depth control of microlens-integrated intracavity contacted vertical-cavity surface-emitting lasers by in-situ laser reflectometry and reflectivity modeling

Cited by 10 publications

References 14 publications

Optically monitoring and controlling nanoscale topography during semiconductor etching

Optically monitoring and controlling nanoscale topography during semiconductor etching

Recent Approaches for Broadening the Spectral Bandwidth in Resonant Cavity Optoelectronic Devices

Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication

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