Precise control of single- and bi-layer graphene growths on epitaxial Ni(111) thin film

Entani, Shiro; Matsumoto, Yoshihiro; Ohtomo, Manabu; Аврамов, Павел В.; Naramoto, H.; Sakai, Seiji

doi:10.1063/1.3694662

Cited by 22 publications

(7 citation statements)

References 26 publications

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“…Highly uniform SLG with complete surface coverage can be synthesized under these preparation conditions, as has been shown in the previous study. 11 The XAS and XMCD measurements were performed at the so X-ray beam line BL-7A at the Photon Factory, KEK (Tsukuba, Japan). The XMCD chamber is equipped with an electromagnet and an imaging type electron detector, which is composed of a phosphor screen, a micro-channel plate and a retarding grid for collecting Auger electrons selectively, for the depth-resolved measurements.…”

Section: Methodsmentioning

confidence: 99%

Spin orientation transition across the single-layer graphene/nickel thin film interface

et al. 2013

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Section: Methodsmentioning

confidence: 99%

Spin orientation transition across the single-layer graphene/nickel thin film interface

et al. 2013

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“…The plots of the charge density difference between the SLG/CFGG heterostructures and the fragments of free-standing SLG and CFGG (Figure 5a,b, insets) reveal that there is no covalent chemical bonding between SLG and CFGG, but weak electrostatic interactions induced by the electron polarization (≈10 −4 electrons Å −3 ) between the π orbitals of graphene and the 3d orbitals of the surface atoms of CFGG. [52,72,73] The presence of the electron polarization under the van der Waals bonding is found to be responsible for the doping of SLG with keeping the Dirac band. It is reasonably considered that the weakness of the interfacial interaction allows the observation of the intense Raman signals from graphene in the SLG/CFGG heterostructure (Figure 2a) opposite to other SLG/ferromagnet heterostructures.…”

Section: Wwwadvmatde Wwwadvancedsciencenewscommentioning

confidence: 99%

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Larionov

Попов

et al. 2019

Advanced Materials

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For years graphene has been considered as the most potential material which paves the way to advanced spintronic devices [1][2][3][4][5][6] due to its extraordinary electrical and physical properties. [7][8][9][10] The long spin diffusion length in graphene originated from the weak spin-orbit interaction and high electron mobility have stimulated numerous studies on developing graphene-based lateral spin valve (SV) in the past decade. [11][12][13][14][15][16] Apart from the application to lateral SV dealing with in-plane spin transport in a graphene channel, another potential application that is the implementation of graphene as a spacer material in vertical SV has recently become a subject of intense interest. [17][18][19][20][21][22] In development of vertical SV, the achievement of both the low resistance-area (RA) product and large magnetoresistance (MR) ratio is required for the realization of read heads for ultrahigh-density hard disk drives, [23] and magnetic random access memory [5,6] with high-speed operation and low power consumption. However, the current technology Graphene-based vertical spin valves (SVs) are expected to offer a large magnetoresistance effect without impairing the electrical conductivity, which can pave the way for the next generation of high-speed and low-power-consumption storage and memory technologies. However, the graphene-based vertical SV has failed to prove its competence due to the lack of a graphene/ferromagnet heterostructure, which can provide highly efficient spin transport. Herein, the synthesis and spin-dependent electronic properties of a novel heterostructure consisting of single-layer graphene (SLG) and a half-metallic Co 2 Fe(Ge 0.5 Ga 0.5 ) (CFGG) Heusler alloy ferromagnet are reported. The growth of high-quality SLG with complete coverage by ultrahigh-vacuum chemical vapor deposition on a magnetron-sputtered single-crystalline CFGG thin film is demonstrated. The quasi-free-standing nature of SLG and robust magnetism of CFGG at the SLG/ CFGG interface are revealed through depth-resolved X-ray magnetic circular dichroism spectroscopy. Density functional theory (DFT) calculation results indicate that the inherent electronic properties of SLG and CFGG such as the linear Dirac band and half-metallic band structure are preserved in the vicinity of the interface. These exciting findings suggest that the SLG/CFGG heterostructure possesses distinctive advantages over other reported graphene/ferromagnet heterostructures, for realizing effective transport of highly spin-polarized electrons in graphene-based vertical SV and other advanced spintronic devices.

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“…Efforts toward graphene growth using non-methane precursors of benzene and acetylene have also been made under ultralow pressure CVD conditions. 20,25 Ethanol, a non-hydrocarbon precursor, has proven to be a low-cost, clean carbon source well suited for the synthesis of single-walled carbon nanotubes (SWNTs) with high purity and yield. 21 The oxygen in ethanol improves the quality of SWNTs by reacting with any amorphous carbon produced during synthesis.…”

Section: Cvd Growth Of Graphene On Ni From Ethanolmentioning

confidence: 99%

Investigation of non-segregation graphene growth on Ni via isotope-labeled alcohol catalytic chemical vapor deposition

et al. 2013

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Here we present CVD growth of graphene on Ni and investigate the growth mechanism using isotopically labeled (13)C-ethanol as the precursor. Results show that during low-pressure alcohol catalytic CVD (LP-ACCVD), a growth time of less than 30 s yields graphene films with high surface coverage (>80%). Moreover, when isotopically labeled ethanol precursors were sequentially introduced, Raman mapping revealed that both (12)C and (13)C graphene flakes exist. This shows that even at high temperature (∼900 °C) the graphene flakes form independently, suggesting a different growth mechanism for ethanol-derived graphene on Ni from the segregation process for methane-derived graphene. We interpret this growth mechanism using a direct surface-adsorptive growth model in which small carbon fragments catalyzed from ethanol decomposition products first nucleate at metal step edges or grain boundaries to initiate graphene growth, and then expand over the entire metal surface.

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Precise control of single- and bi-layer graphene growths on epitaxial Ni(111) thin film

Cited by 22 publications

References 26 publications

Spin orientation transition across the single-layer graphene/nickel thin film interface

Spin orientation transition across the single-layer graphene/nickel thin film interface

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Investigation of non-segregation graphene growth on Ni via isotope-labeled alcohol catalytic chemical vapor deposition

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