Precise Analysis of Surface Recombination Velocity in Crystalline Silicon Solar Cells Using Electroluminescence

Takahashi, Yasuhiro; Kondō, Hayato; Yamazaki, Tsutomu; Uraoka, Yukiharu; Fuyuki, Takashi

doi:10.1143/jjap.46.l1149

Cited by 7 publications

(5 citation statements)

References 4 publications

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“…We find, in agreement with [15], that surface recombination has a strong effect on EL. At the same time, photoconversion efficiency depends on S much weaker, at least within the practically relevant range of S less than 200 cm/s.…”

Section: Introductionsupporting

confidence: 91%

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Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Sachenko

Bobyl

Verbitskiy

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this work, electroluminescence (EL) intensity and photoconversion efficiency of a set of 93 large-area (239 cm 2 ) a-Si:H/c-Si heterojunction SCs (HJSCs) are measured under AM1.5 conditions at 298 K. The HJSC samples differed only in surface recombination velocity, S, but otherwise were identical. Variation in S was due to the variation of the chemical conditions under which the samples were treated. It is established that EL quantum efficiency, is affected by S much more strongly than photoconversion efficiency, η: namely, the reduction of the latter from 20.5% to 18% due to an increase of S is accompanied by a decrease of the former by more than an order of magnitude. In HJSCs with well passivated surfaces, i.e. low S, EL efficiency reached 2.1%, which is notably higher than the known values in silicon homojunction diodes. For temperaturedependent measurements of EL and dark I-V curves, one of the samples was cut into small-area (1 cm 2 ) pieces. It was found that EL intensity as a function of temperature develops a maximum at T = 223 K. At low temperatures, the current at weak bias is shown to be due to tunneling mechanism. A theoretical model is developed that explains all these findings quantitatively.PACS numbers:

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Section: Introductionsupporting

confidence: 91%

“…We are aware of only one paper [15] where the effect of surface recombination rate on EL intensity was stud- * E-mail: mevstigneev@mun.ca ied systematically. An interesting conclusion made in that work is that EL intensity is very sensitive to surface recombination velocity, and therefore can be used to determine the latter.…”

Section: Introductionmentioning

confidence: 99%

Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Sachenko

Bobyl

Verbitskiy

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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“…The solar cell is therefore a structure from which, the maximum current of electrical charges must be drawn (extracted), while keeping an electrical voltage most removed (open circuit). This involves optimizing the physical mechanisms [50] involved (intrinsic and external) and the size of the geometry of the structure (grain size (g) and orientation, size of different regions) [51] [52] [53] [54] [55].…”

Section: Introductionmentioning

confidence: 99%

Back Illuminated N/P/P+ Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

Sall¹,

Diarisso²,

Fall³

et al. 2021

EPE

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A bifacial silicon solar cell under monochromatic illumination in frequency modulation by the rear side is being studied for the optimization of base thickness. The density of photogenerated carriers in the base is obtained by resolution of the continuity equation, with the help of boundary conditions at the junction surface (n + /p) and the rear face (p/p + ) of the base. For a short wavelength corresponding to a high absorption coefficient, the AC photocurrent density is calculated and represented according to the excess minority carrier's recombination velocity at the junction, for different modulation frequency values. The expression of the AC recombination velocity of excess minority carriers at the rear surface of the base of the solar cell is then deduced, depending on both, the absorption coefficient of the silicon material and the thickness of the base. Compared to the intrinsic AC recombination velocity, the optimal thickness is extracted and modeled in a mathematical relationship, as a decreasing function of the modulated frequency of back illumination. Thus under these operating conditions, a maximum short-circuit photocurrent is obtained and a low-cost bifacial solar cell can be achieved by reducing material (Si) to elaborate the base thickness.

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“…To improve (or control) the quality (performance) of solar cells [1] [2], especially silicon, the recombination parameters of minority carriers, in the bulk (volume) and on interfaces, are the subject of theoretical and experimental investigations [3] [4] [5].…”

Section: Introductionmentioning

confidence: 99%

AC Back Surface Recombination Velocity in n＋-p-p＋ Silicon Solar Cell under Monochromatic Light and Temperature

Fall¹,

Gaye²,

Diarisso³

et al. 2021

JEMAA

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Excess minority carrier's diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n + /p) and back surface (p + /p), the AC expression of the excess minority carriers' density δ (T, ω) is determined. The AC density of photocurrent J ph (T, ω) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity Sb of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (D (ω)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.

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Precise Analysis of Surface Recombination Velocity in Crystalline Silicon Solar Cells Using Electroluminescence

Cited by 7 publications

References 4 publications

Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature

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Precise Analysis of Surface Recombination Velocity in Crystalline Silicon Solar Cells Using Electroluminescence

Cited by 7 publications

References 4 publications

Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Back Illuminated N/P/P&lt;sup&gt;+&lt;/sup&gt; Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

AC Back Surface Recombination Velocity in n&lt;sup&gt;＋&lt;/sup&gt;-p-p&lt;sup&gt;＋&lt;/sup&gt; Silicon Solar Cell under Monochromatic Light and Temperature

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Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature