Abstract:Germanium implantation into silicon substrate is currently used to preamorphisize the crystalline structure in order to avoid boron channeling effects in shallow P+N junction manufacturing. Nevertheless, after boron doping and rapid thermal annealing, different defects are formed within the structure, such as end of range defects which are created at the amorphous/crystalline interface. Our study concerns two types of shallow P+N junctions. These junctions were fabricated using low energy boron implantation at… Show more
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