Pre-amorphization damage in ion-implanted silicon

Schreutelkamp, R.J.; Custer, J. S.; Liefting, J.R.; Lu, Wen‐Cai; Saris, F. W.

doi:10.1016/0920-2307(91)90001-4

Cited by 134 publications

(67 citation statements)

References 202 publications

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“…They are located at a depth of about 1.7 pm, corresponding to the projected range. The number of Si atoms displaced exceeded the critical number for secondary defect formation [36]. This circular form of dislocation loops was expected for the peak anneal temperature of 1475 K [41], while for lower anneal temperatures rod-like defects elongated along (110) directions would be obtained [36].…”

Section: Analysis Of B-implanted Simentioning

confidence: 95%

“…At higher implanted doses, more damage sufficient to form secondary defects is present [8,36]. During T-RTA, the damage clusters coalesce to produce secondary defects in the form of dislocation loops.…”

Section: Analysis Of P-implanted Simentioning

confidence: 99%

“…With the lowest doses of 5 × 1013 and 7.5 x 1013 cm -2 (not shown here) we obtained the same rc as for the non-implanted sample. Schreutelkamp et al [36] found that the critical dose for secondary defect formation is about 5 x 1013 cm -2, independent of implantation energy. At 7.5 × 1013 cm -2 a low concentration of secondary defects forms (less than 108 dislocations cm -2) which is apparently not detectable with XRD.…”

Section: Analysis Of P-implanted Simentioning

confidence: 99%

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Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

et al. 1993

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High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the qualitative analysis of damage annealing of low-dose, high-energy implanted (001) silicon, implanted with dopants smaller than the host atom. The choice of proper Bragg reflection for the rocking-curve measurements is shown to be of crucial importance. The graphic construction of the Ewald sphere is a useful aid for this purpose. As the in-plane lattice constant is confined by the underlying substrate, a change occurs in the perpendicular direction only. Therefore the (026)~ reflection appears to be the most suitable for the detection of changes in lattice constant caused by implantation damage. Qualitative analysis of rocking curves of P-and B-implanted Si samples was compared with electrical measurements and cross-section transmission electron micrographs. It could be established that the minimum implantation doses of P and B at energies ranging from 0.5 to 1.5 MeV, for which HR-XRD is sensitive enough, are about 1.5 x 10 ~4 cm -2 and 5 x 10 ~3 cm -2 respectively. The minimum peak temperature needed for complete damage anneal by transient-rapid thermal annealing was about 1400 K for all doses considered.

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Section: Analysis Of B-implanted Simentioning

confidence: 95%

Section: Analysis Of P-implanted Simentioning

confidence: 99%

Section: Analysis Of P-implanted Simentioning

confidence: 99%

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Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

et al. 1993

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“…These secondary defects can be detrimental to device performance. Therefore, much effort has been put into determining when or how these dislocations form [4,[6][7][8][9]. In particular, it has been demonstrated for room temperature (RT) implants that dislocations are present after annealing only if more than a critical number of atoms have been displaced by the implant [6].…”

Section: Introductionmentioning

confidence: 99%

“…The major drawback is that secondary defects, extrinsic interstitial dislocations, may form during the thermal treatment required to anneal out the implant damage and activate the dopants [2][3][4][5][6]. These secondary defects can be detrimental to device performance.…”

Section: Introductionmentioning

confidence: 99%

Time evolution of dislocation formation in ion implanted silicon

Liefting¹,

Custer²,

Saris³

1994

Materials Science and Engineering: B

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Annealing of crystal damage from ion implantation may restflt in dislocation formation. Here we study the nucleation, growth, and annihilation of such dislocations during rapid thermal anneals of Si, Ge, As, and In implanted Si. The dislocation formation process is observed for single or multiple damage profiles, as well as in amorphous-crystal transition regions. Dislocations initially nucleate in all these cases, even if they eventually annihilate during further annealing. It is also shown that for C implants in Si not only do dislocations not remain after annealing, but they do not even nucleate.

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Micro‐Raman spectroscopy of Si‐, C‐, Mg‐ and Be‐implanted GaN layers

Wang

Tripathy

Sun

et al. 2004

J Raman Spectroscopy

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We have carried out a systematic Raman study on Si-, C-, Mg-and Be-implanted GaN layers. In the as-implanted GaN layers, new Raman bands around 293-300, 360 and 666-671 cm −1 have appeared. From the phonon-dispersion curves for hexagonal GaN, the 293-300 cm −1 and 666-671 cm −1 bands are assigned to the highest acoustic-phonon branch and the optical-phonon branch at the Brillouin zone boundaries, respectively. Several new modes at 168, 199, 320 and 346 cm −1 are also observed in the Raman spectra of Be-implanted GaN after post-implantation annealing and could be associated with Be-related local vibrational modes in GaN. In the Si-implanted GaN, we have also observed a new local vibrational mode at 612 cm −1 after thermal annealing.

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Pre-amorphization damage in ion-implanted silicon

Cited by 134 publications

References 202 publications

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

Time evolution of dislocation formation in ion implanted silicon

Micro‐Raman spectroscopy of Si‐, C‐, Mg‐ and Be‐implanted GaN layers

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