Practical Evaluation Method of Oxygen Precipitation in the Czochralski Silicon

Abstract

A simple, practical way to evaluate process-induced oxygen precipitates was investigated. Effective values of fastest nucleation point (TC , J max) were derived as parameters of precipitate densities from the as-grown oxygen precipitate nuclei distributions by fitting them into the cumulative function F(T) of the nucleation rate J = J(Oi, CV, T). Precipitate densities were clearly explained by TC and J max in the entire Oi and point defect region. From the relations of Oi and Cv on the fastest nucleation point in the nucleation rate, TC is closely related to the CV and expected as a potential indicator of evaluating the practical CZ-Si manufacturing.