Practical aspects of deposition of CVD SiC and boron silicon carbide onto high temperature composites

Highly Volatile, Low Melting, Fluorine-Free Precursors for Metal-Organic Chemical Vapor Deposition of Lanthanide Oxide-Containing Thin Films

“…[1a,3] These characteristics are particularly important in developing metal oxide precursors, since the volatile species must ideally survive oxidizing and/or moisture-rich background environments to cleanly decompose/yield films in the reactor hot-zone. Previously, our efforts [4] focused on the volatility challenges of small charge-to-radius ratio metal ions (e.g., alkaline earths) and their derived films, however, recent advances in lanthanide-containing ceramics (high-temperature superconductors, [5] rare-earth doped phosphors, [6] dielectrics, [5,7] and magnetic materials [8] ) led us to simultaneously explore the growth of these materials in thin-film form. Immediately, we discovered that lanthanide ions pose many of the same vapor transport challenges as alkaline earths, [9] and the synthesis of fluorine-free, volatile, and robust precursors is currently an unrealized objective for successful film growth.…”

Oxidation Protection of High-Temperature Coatings on the Surface of Mo-Based Alloys—A Review

“…In addition, during coating preparation, the process parameters, surface roughness and substrate temperature will also have certain effects on the oxidation performance of the coating [66][67][68]. The principle behind chemical vapor deposition (CVD) technology is the process of using gaseous substances reacting with a solid substrate to generate solid deposits [69,70]. The process conditions and mechanical properties of the oxidation-resistant coatings prepared on molybdenum by the CVD technique as shown in Table 6 [71][72][73][74][75].…”

SiCf/SiC Composite: Attainment Methods, Properties and Characterization

“…Ortona (Ortona et al, 2000), Interrante (Interrante et al, 1997) and Nechanicky (Nechanicky et al, 2000) have suggested that this process requires, complex and expensive equipment and typically produces gaseous hydrochloric acid as a byproduct, in addition to the difficulty of infiltrating into thick layers ( 4mm). Pochet (Pochet et al, 1996) also studied some limitations of the chemical vapor infiltration technique: exhaust from the gas phase, which results in a high growth rate of the substrate layer, nodular deposits and variation of the deposit thickness in the substrate.…”