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Mamedov, T. N.; Chaplygin, I.; Duginov, V. N.; Grebinnik, V. G.; Gritsaj, K. I.; Olshevsky, V. G.; Pomjakushin, Vladimir; Stoykov, A.; Жуков, В. А.; Krivosheev, I. A.; Nikolsky, B. A.; Ponomarev, A. N.; Gorelkin, V. N.

doi:10.1023/a:1012688329281

Cited by 14 publications

(7 citation statements)

References 2 publications

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“…This is close to that predicted theoretically in the high temperature limit in the absence of external magnetic fields for the single phonon process: ν ph ~ T [6]. For the Raman process, one can expect, similar to the case of silicon, a much stronger temperature dependence of the relax ation rate: ν ph ~ T α , 3 Շ α Շ 5 [9,13,14].…”

Section: 84supporting

confidence: 88%

“…The relaxation of the muon spin is not observed. This result evidences that, unlike the case in n type silicon [9], in n type germanium the muonic atom forms in the diamagnetic state within the time Շ10 -9 s and the concentration of non equilibrium charge carriers (produced during the muon slowing down and forma tion of the muonic atom) is negligible at times ≥10 -9 s.…”

Section: Resultssupporting

confidence: 53%

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Relaxation of the shallow acceptor center in germanium

et al. 2012

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Section: 84supporting

confidence: 88%

Section: Resultssupporting

confidence: 53%

Relaxation of the shallow acceptor center in germanium

et al. 2012

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“…Figure 3 gives the temperature dependence of the relaxation rate and precession-frequency shift δω/ω 0 , where ω 0 is the precession angular frequency at room temperature. The temperature dependence of the relaxation rate is well approximated by the function λ = dT −q , where d = (4.0 ± 0.7) × 10 3 µs −1 , q = 2.73 ± 0.06 and the temperature is given in K. In the present study the value of the parameter q was determined four times more precisely than in previous work [5,6]. The data given in figure 3 confirm the conclusion [6] that at T < 50 K there is a shift of the muon spin-precession frequency.…”

Section: Phosphorus-doped Siliconmentioning

confidence: 63%

“…The temperature dependence of the relaxation rate and the precession-frequency shift of negative muon spin in n-and p-type silicon at temperatures below 30 K were observed in previous µ − SR experiments [4][5][6].…”

Section: Introductionmentioning

confidence: 61%

Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

Mamedov

Chaplygin

Duginov

et al. 1999

J. Phys.: Condens. Matter

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The residual polarization of negative muons has been studied for phosphorus-doped ([P]: 1.6 × 10 13 cm −3 ) and antimony-doped ([Sb]: 2 × 10 18 cm −3 ) silicon crystals. The measurements were carried out in a transverse magnetic field of 0.1 T over the temperature region 4 K-300 K. The ionized and neutral states of the µ Al pseudo-acceptor were observed in antimony-doped silicon for the first time. The rate of transition from the neutral to the ionized state of the acceptor was found to be equal to 1.2 × 10 6 s −1 over the temperature range 4 K-12 K. The estimated rates of relaxation of the magnetic moment of the acceptor-centre electron shell are 5 × 10 10 s −1 and 1.6×10 12 s −1 in phosphorus-doped silicon and 6×10 11 s −1 and 6.7×10 12 s −1 in antimony-doped silicon at 4 K and 15 K respectively. The experimental results obtained are interpreted in terms of spin-lattice relaxation of the acceptor magnetic moment and of the acceptor-donor pair formation.

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“…At room temperature (T = 300 K) the muon spin precession frequency in the D6 sample is close to that in the reference sample: [ω(C) − ω(D6)]/ω(C) = (1.8 ± 0.4) • 10 −4 . Opposite to the theoretical prediction [7] and to the experimental results in silicon [15], a negative shift of the muon spin precession frequency was observed at temperatures below 250 K. The temperature dependence of the frequency shift can be approximated as [ω(T ) − ω(300 K)]/ω(300 K) = ∆ω/ω ∼ −1/T (dotted line in Fig. 1).…”

Section: Resultsmentioning

confidence: 52%

Muonic atom as an acceptor centre in diamond

Mamedov¹,

Baturin²,

Gritsaj³

et al. 2014

J. Phys.: Conf. Ser.

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Polarized negative muons were used to study the behaviour of the boron acceptor centre in synthetic diamond produced by the chemical vapour deposition (CVD) method. The negative muon substitutes one of the electrons in a carbon atom, and this muonic atom imitates the boron acceptor impurity in diamond. The temperature dependence of the muon spin relaxation rate and spin precession frequency were measured in the range of 20 − 330 K in a transverse magnetic field of 14 kOe. For the first time a negative shift of the muon spin precession was observed in diamond. It is tentatively attributed to an anisotropic hyperfine interaction in the boron acceptor.The magnetic measurements showed that the magnetic susceptibility of the CVD sample was close to that of the purest natural diamond.Diamond with its unsurpassed mechanical strength, thermal conductivity, and radiation hardness is a promising semiconductor for particle detectors and electronic components capable of withstanding high heat and radiation loads. Great advances have been made over the last years in the technology of manufacturing synthetic single crystal diamond and diamond films [1,2, 3].Boron is the only dopant which forms an acceptor centre (AC) in diamond with an ionization energy of ≈ 370 meV [4]. The metal-insulator transition occurs at a concentration of ≈ 2 · 10 20 cm −3 of boron atoms [5]. The EPR signal of boron impurities in diamond was observed only for uniaxially stressed samples [6], and the electronic state of this acceptor is investigated insufficiently.The possibility of using negative muons to study the behaviour of acceptor impurities in diamond arises from the fact that capture of a negative muon by a carbon atom results in the formation of a muonic atom µ B with an electron shell that is analogous to that of the boron atom. The evolution of the polarization of µ − in the 1s atomic state depends on the interaction of the muon spin with the electron shell of the muonic atom and on the interactions of this muonic atom 1

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Cited by 14 publications

References 2 publications

Relaxation of the shallow acceptor center in germanium

Relaxation of the shallow acceptor center in germanium

Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

Muonic atom as an acceptor centre in diamond

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