Power supply of remote and almost inaccessible settlements

Surzhikova, O A

doi:10.1088/1757-899x/81/1/012098

Cited by 7 publications

(2 citation statements)

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“…definition of lead or other equivalent of stationary means of radiation protection follows [25,26]. Having decided on parameters and the sizes of x-ray optical system and also a source of x-ray radiation, there is a task of calculation of the lead screen of protection against x-ray radiation for safe work on this system according to the international standards [27].…”

Section: Samples and Research Methodsmentioning

confidence: 99%

Calculation of Structural Parameters and Design of a Protective Shield for an X-Ray System

Plotnikova¹

2020

Eurasian phys. tech. j.

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The need to calculate the radiation protection of the radiation system is the basis in which diagnostic, design or assembly activities are carried out as part of non-destructive testing. The paper provides an analysis of the design features of x-ray systems and their technical characteristics, operating conditions, diagnostic capabilities of modern tomographic systems. The dependences of the distribution of X-ray radiation and voltage on the thickness of the protective screen are given. The calculation of the thickness of the protective screen is presented, which will allow you to design the body of the protective screen of the x-ray system. The above studies will facilitate the work of specialists in the development of new modifications of x-ray systems.

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Section: Samples and Research Methodsmentioning

confidence: 99%

Calculation of Structural Parameters and Design of a Protective Shield for an X-Ray System

Plotnikova¹

2020

Eurasian phys. tech. j.

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“…The purpose of this work was to obtain a new data on defects in GaN-based structures by photoluminescence methods and develop examination methods and method of inward express-testing of wafers with heterostructures before starting their production. Photoluminescence has been used to make the "maps" of "yellow" photoluminescence over the area of AlGaN/GaN/SiC and AlGaN/GaN/sapphire heterostructures [4][5][6][7][8]. Classic spectrum of "yellow" photoluminescence has been observed, and great variation of a signal over the area of samples related to yellow photoluminescence has been obtained.…”

Section: Examination Of Photoluminescencementioning

confidence: 99%

The application of the Methods of Cathodoluminescence and Photoluminescence for Non-destructive Testing of AlGaN Heterostructures

Kontsevoy

Pevtsov

Khmelnitskiy

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. This paper examines cathodoluminescence spectra of samples on sapphire substrates to develop methods of non-destructive testing of wafers with AlGaN/GaN heterostructures. It has been determined that the cathodoluminescence peak of AlGaN compound was demonstrated for decreased energy of excitation electrons (at 0.5 eV and 1 keV) only. Cathodoluminescence peak of AlN compound with energy of 6.15 eV was demonstrated at any excitation energy of 0.5 to 6.15 eV. It has been demonstrated that cathodoluminescence spectrum analysis allowed determining aluminum percentage in AlGaN, which was essential for inward testing of wafers for microwave transistors production. Data on the intensity distribution of "yellow" photoluminescence over the wafer surface has been obtained, and it has been demonstrated that these measurements were a prospective method of non-destructive testing to sorting wafers by defects. IntroductionThere are a number of publications which state that in order to obtain high-quality AlGaN/GaN-based high electron mobility transistors, Al content in the AlGaN layer should be within the range of 20 to 35 %. The main purpose of this work is to develop cathodoluminescence methods as implements for non-destructive testing in order to determine aluminum content in heterostructures before their production is started. Methods of cathodoluminescence and photoluminescence are effectively used for examination of properties of wide-band gap materials and structures, in particular, for examination of dislocation nature in GaN thin films and for control of self-radiation related to a band-to-band junction [1][2][3]. Cathodoluminescence and photoluminescence allow detecting the defects related to luminescence in the visible spectrum. The relation between the so-called "yellow" cathodoluminescence excited by electrons of various energy and resistance of ohmic contacts of a GaN source and drain of microwave transistors has been ascertained. Aluminum content in AlGaN layers has been examined, in particular, in the work [3], however, thick layers of specified material (hundreds of nanometers thick) have been used. In this work, AlGaN layers with a thickness of 20nm have been examined.

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