Abstract:The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and smaller passive components which result in higher power density. SiC devices have higher blocking voltages, lower on-state resistance and switching losses and higher thermal conductivity and operating temperatures. SiC devices can operate at higher voltages, higher frequencies and higher junction temperatures than comparable Si devices, which results in significant reduction in weight and size of the power convert… Show more
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