Power Losses of Advanced MMC Submodule Topologies Using Si- and SiC-Semiconductors

Dahmen, Christopher; Marquardt, Rainer

doi:10.23919/epe.2019.8915430

Cited by 14 publications

(3 citation statements)

References 39 publications

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“…The double-zero (DZ) SM, Fig. 6(h), has been proposed in [10], [142], [143]. Compared to the FB it employs an additional switch in series to the capacitor.…”

Section: ) Unipolar Voltage Smsmentioning

confidence: 99%

“…7(c). The DCDZ combines the advantages of the SFB and the DZ, such as low losses R6 , improved capacitor voltage balancing, and lower capacitor voltage ripple R9 [143], [147]. The principle can be extended to more levels, for both the SFB and the DCDZ, resulting in the semi-full-bridge cluster (SFBC) and the cascaded double-zero cluster (CDZC), shown in Fig.…”

Section: ) Unipolar Voltage Smsmentioning

confidence: 99%

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Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Jacobs

Heinig

Johannesson

et al. 2021

IEEE Trans. Power Electron.

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Recent advancements in silicon carbide (SiC) power semiconductor technology enable developments in the high-power sector, e.g., high-voltage direct current (HVdc) converters for transmission, where today silicon (Si) devices are state-of-theart. New submodule (SM) topologies for modular multilevel converters (MMCs) offer benefits in combination with these new SiC semiconductors. This paper reviews developments in both fields, SiC power semiconductor devices and SM topologies, and evaluates their combined performance in relation to core requirements for HVdc converters: grid code compliance, reliability, and cost.A detailed comparison of SM topologies regarding their structural properties, design and control complexity, voltage capability, losses, and fault handling is given. Alternatives to state-of-the-art SMs with Si insulated-gate bipolar transistors (IGBTs) are proposed, and several promising design approaches are discussed. Most advantages can be gained from three technology features. Firstly, SM bipolar capability enables dc fault handling and reduced energy storage requirements. Secondly, SM topologies with parallel conduction paths in combination with SiC metal-oxide-semiconductor field effect transistors (MOSFETs) offer reduced losses. Thirdly, a higher SM voltage enabled by higher blocking voltage of SiC devices results in reduced converter complexity. For the latter, ultra-high-voltage (UHV) bipolar devices, such as SiC IGBTs and SiC gate turn-off thyristors (GTOs), are envisioned. Index Terms-HVdc transmission, modular multilevel converter, power semiconductor devices, silicon carbide, submodules. I. INTRODUCTIONH VDC transmission technology requires integration into the existing alternating current (ac) grid. The conversion is performed via high-power converters. The modular multilevel converter (MMC) is a versatile and flexible topology with several options for optimization. MMCs have been intensively investigated since the early 2000's. It was identified, that modularity, scalability, built-in redundancy, and harmonic performance are advantageous for meeting widely varying requirements in grid applications. Compared to previous voltage source converters (VSC), the need for bulky harmonic filters is Keijo Jacobs

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“…The double-zero (DZ) SM, Fig. 6(h), has been proposed in [10], [142], [143]. Compared to the FB it employs an additional switch in series to the capacitor.…”

Section: ) Unipolar Voltage Smsmentioning

confidence: 99%

Section: ) Unipolar Voltage Smsmentioning

confidence: 99%

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Jacobs

Heinig

Johannesson

et al. 2021

IEEE Trans. Power Electron.

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show abstract

“…Furthermore, various concepts for the freewheeling diodes were attending for higher SiC voltage classes [6,7]. Further investigations seem to be promising as other research have shown on system and circuit level presented in [8][9][10][11][12] and [13]. A review of comparison of Si and SiC based MMC can be found in [14,15].…”

Section: Introductionmentioning

confidence: 99%

Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

Bergmann,

Bakran

2024

IET Power Electronics

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This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results, a mathematical derivation for the optimised semiconductor area design is executed. After this step, a system loss simulation shows the performance in efficiency and specific output power. Finally, a proof of concept was provided by a scaled hardware test setup to characterise the dynamic behaviour of the novel SiC half bridge design compared to the conventional SiC half bridge.

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A Highly Efficient Hybrid Devices-based MMC with a Novel Modulation Scheme Using Hardware-in- Loop System

Shahane

Belkhode

Shukla

et al. 2022

2022 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Power Losses of Advanced MMC Submodule Topologies Using Si- and SiC-Semiconductors

Cited by 14 publications

References 39 publications

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

A Highly Efficient Hybrid Devices-based MMC with a Novel Modulation Scheme Using Hardware-in- Loop System

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