Power limitation protection function in integrated low side switches

Iliuta, Ioana; Danchiv, Andrei

doi:10.1109/smicnd.2013.6688663

Cited by 2 publications

(1 citation statement)

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“…The current sampling transistor MN2 is connected in parallel with the power MOSFET MN1. The aspect ratio of MN1 and MN2 is 7400:1, so the current owing through the sampling transistor is quite small, making the voltage drop of the sampling resistor R1 negligible [13], so the source voltages of MN2 and MN1 are approximately equal. According to the linear region current expression of MOSFET:…”

Section: Architecture Of the Proposed Circuitmentioning

confidence: 99%

Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch

Gao¹,

Cai²,

Hao

et al. 2022

Preprint

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Based on 0.35μm BCD process, a current-limiting and short-circuit protection circuit for low-side power switch is proposed. This design adopts the compact current comparator structure to achieve 2A current limiting protection and short circuit protection for the power switch over the temperature range of -25°C to 150°C, while quiescent power consumption is only 55.8μw. The sense-FET technology of this design can achieve 98.11% accurate current sampling. Simulation and experimental results show that when the load is lower than 7.5Ω at 18V supply voltage, the current-limiting protection is triggered to limit the output current to 2A. When the load is short-circuited, the short-circuit protection is triggered and the entire circuit will be shut down. The power supply rejection ratio of this design is -53dB, and the average temperature coefficient is 277ppm/℃, while only occupying an area of 0.055 mm2.

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Section: Architecture Of the Proposed Circuitmentioning

confidence: 99%