Power diamond vertical Schottky barrier diode with 10 A forward current

Abstract

We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 10 16 and 2 Â 10 17 cm À3 were made. The diodes possess an integral forward current higher than 10 A in the temperature range of 25-200 8C. The self-heating effect further improves the diode forward characteristics. We tested different crystal-to-case thermal interfaces. Diodes have less than 3.5 V forward voltage drop for 10 A at 25 8C and less than 1 V at 200 8C with the onresistance as low as 0.05 Ω (10 mV cm 2 ). We calculated the real Baliga figures of merit (BFOM) of diodes taking into account an incomplete acceptors ionization and a finite substrate resistivity. The low doped diamond conductivity model was used to calculate and optimize the BFOM for various diode designs. The diodes with BFOM up to 200 MW/cm 2 can be made for diamond drift layer with the blocking field of 2 MV/cm and as high as 18000 MW/cm 2 in the case of E MAX $8 MV/cm.

Low Temperature Thermal Conductivity of Heavily Boron-Doped Synthetic Diamond: Influence of Boron-Related Structure Defects

“…In [10] the following expressions for scattering times are given: In the previous work we determined parameters A, B and C in (3) and (4) for IIa diamond and IIb diamond with ∼ 5⋅10 18 cm -3 boron content. From fitting the data on BDD with 5⋅10 18 cm -3 boron we determined parameters K 1 and K 2 in expressions (7) and (8), which describe phonon-dislocation scattering. The values of these parameters are given in the We estimated the dislocation density of BDDs with 2⋅10 19 and 5⋅10 19 cm -3 of boron from the best fit with the model parameters from the table.…”

“…Boron-doped IIb-type diamonds (BDD) are p-type semiconductors extensively used in design of high-power, high-frequency, high temperature electronic devices [6][7][8]. Thermal conductivity of single-crystal BDD is an important parameter for electronic devices but it is much less investigated comparing to undoped IIa-type diamonds.…”

Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

“…The fabrication of vertical Schottky diodes relies on the ability to grow thick heavily-doped CVD material. Such layers can advantageously replace HPHT IIb substrates that exhibit a higher resistivity and are poorly available [7,27,28]. To this end a thick boron-doped layer was grown on a larger (113) CVD substrate provided by Element 6 (sample F) which was later removed.…”

Impact of Laser Wavelength on the Optical and Electronic Properties of Black Diamond

“…Just to mention a few of them, diamond detectors for ionizing radiation and particles represent a well‐established technology in the world of experimental high‐energy physics, due to extremely high resistance to radiation damage. Moreover, diamond‐based electronic devices show outstanding performance for high‐power and high‐frequency applications, due to the high breakdown field, the low dielectric constant, and the high carrier mobility . Finally, the possibility of achieving negative electron affinity (NEA) by surface hydrogenation makes diamond unique among the materials suitable for the fabrication of efficient thermionic converters …”