Power Cycling at High Temperature Swings of Modules with Low Temperature Joining Technique

Amro, Raed; Lutz, Josef; Rudzki, Jacek; Sittig, R.; Thoben, M.

doi:10.1109/ispsd.2006.1666110

Cited by 32 publications

(11 citation statements)

References 1 publication

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“…A direct comparison between Sn96,5Ag3Cu0,5 solder and the sinter interconnection by passive temperature cycling tests revealed from -55 °C to 175 °C revealed a statistic lifetime of 50.8 cycles for the solder and of 646 cycles of the sinter layer until 20 % of delamination of the connected area [8]. published in 2006 by Amro et al [9] up to 3 million cycles from 80 °C to 150 °C with a cycling time of three seconds published by Scheuermann in 2012 [10]. Guth et al found an 30-60 fold increase of the power cycling capability for silver sintered as well as diffusion bonded samples compared to state of the art modules [11], also in 2012.…”

Section: Silver Sinter Technologymentioning

confidence: 99%

B3.3 - Properties of a novel silver sintering die attach material for high temperature - high lifetime applications

Kraft¹,

Zischler²,

Thắm³

et al. 2013

Proceedings SENSOR 2013

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Section: Silver Sinter Technologymentioning

confidence: 99%

B3.3 - Properties of a novel silver sintering die attach material for high temperature - high lifetime applications

Kraft¹,

Zischler²,

Thắm³

et al. 2013

Proceedings SENSOR 2013

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“…The material was developed by NBE Tech for the low-temperature joining technique (LTJT), an emerging die-attach method pioneered by researchers in the power electronics industry [1][2][3][4][5][6]. For power electronics module packaging, the LTJT dieattach has been shown to offer 3x better electrical performance, 5x temperature-cycling reliability, and a higher device junction temperature up to 175°C [7,8].…”

Section: B Nbe Tech Nanosilver Backgroundmentioning

confidence: 99%

Improved Heat Dissipation and Optical Performance of High-Power LED Packaging with Sintered Nanosilver Die-Attach Material

Panaccione¹,

Wang²,

Chen³

et al. 2010

Journal of Microelectronics and Electronic Packaging

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bstract-Heat removal in packaged high-power iight-emitting diode (LED) chips is critical to device performance and reliability. Thermal performance of LEDs is important in that lowered junction temperatures extend the LED's lifetime at a given photometric flux (brightness). Optionally, lower thermal resistance can enable increased brightness operation without exceeding the maximum allowable Tj for a given lifetime. A significant portion of the junction-to-case thermal resistance comes from the joint between chip and substrate, or the die-attach layer. In this study, we evaluated three different types of leading die-attach materials; silver epoxy, lead-free solder, and an emerging nanosilver paste. Each of the three was processed via their respective physical and chemical mechanisms: epoxy curing by cross-linking of polymer molecules; intermetalic soldering by reflow and solidification; and nanosilver sintering by solid-state atomic diffusion. Highpower LED chips with a range of chip areas from 3.9 mm^ to 9.0 mm^ were attached by the three types of materials onto metalized aluminum nitride substrates, wire-bonded, and then tested in an electro-optical setup. The junction-to-heatsink thermal resistance of each LED assembly was determined by the wavelength shift methodology. We found that the average thermal resistance in the chips attached by the nanosilver paste was the lowest, and it was highest from the chips attached by the silver epoxy. For the 3.9 mm^ die, the difference was about 0.6°C/W, while the difference between the sintered and soldered was about 0.3°CAV. The lower thermal resistance in the sintered joints is expected to significantly improve the photometric flux from the device. Simple calculations, excluding high current efficiency droop, predict that the brightness improvement could be as high as 50% for the 3.9 mm^ chip. The samples will be functionally tested at high current, in both steadystate and pulsed operation, to determine brightness improvements, including the impact of droop. Nanosilver die-attach on a range of chip sizes up to 12 mm^ are also considered and discussed.

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“…This concept was first applied in [3] and recently addressed in detail in [4]. The numerical example is carried out for the case of a sintered silver bond [5][6][7][8][9][10][11][12][13][14]. Sintered silver is, as is known, a good candidate for die bonding as an alternative to lead alloys.…”

Section: Introductionmentioning

confidence: 99%

Bonded Tri-Material Specimen Subjected to Shear-Off Testing: Predicted Interfacial Stresses

Suhir¹

2020

J Aerosp Eng Mech

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Power Cycling at High Temperature Swings of Modules with Low Temperature Joining Technique

Cited by 32 publications

References 1 publication

B3.3 - Properties of a novel silver sintering die attach material for high temperature - high lifetime applications

B3.3 - Properties of a novel silver sintering die attach material for high temperature - high lifetime applications

Improved Heat Dissipation and Optical Performance of High-Power LED Packaging with Sintered Nanosilver Die-Attach Material

Bonded Tri-Material Specimen Subjected to Shear-Off Testing: Predicted Interfacial Stresses

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