Power and efficiency continuous modes in saturated GaN HEMT devices

Abstract

This paper discusses, for the first time, the continuity of optimum load for power and efficiency in saturated GaN devices. Continuous modes are defined originally on the zerograzing voltage assumption. In this paper we show that a continuous behaviour can also be observed in saturated devices without imposing any limitation on clipping. Simulations using a simplified knee-model for the device and source-load pull experimental characterization are critically analysed and compared to describe the discovered continuum.