Power Amplifiers With Frequency-Selective Matching Networks

Estrada, José Antonio Cecchini; Montejo‐Garai, José R.; Paco, Pedro de; Psychogiou, Dimitra; Popović, Zoya

doi:10.1109/tmtt.2020.3020097

Cited by 16 publications

(5 citation statements)

References 26 publications

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“…Planar circuit filters are commonly used for matching transistors, for their low production cost and ease of fabrication [33]- [37]. Compared with nonplanar metallic structures, planar matching filters bring in relatively high losses.…”

Section: Microstrip Filter-amplifiersmentioning

confidence: 99%

Integrated Filter–Amplifiers: A Comprehensive Review

Gao

Shang

et al. 2022

IEEE Microwave

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Section: Microstrip Filter-amplifiersmentioning

confidence: 99%

Integrated Filter–Amplifiers: A Comprehensive Review

Gao

Shang

et al. 2022

IEEE Microwave

View full text Add to dashboard Cite

“…Recently, the fifth generation (5G) communication, relying on the own's advantages of high data transmission rate of Gbps and wider frequency spectrum availability, has been gradually popularized in different industrial environments. To obtain contiguous spectrum availability, 5G millimeter‐wave (mm‐wave) frequency band also has received significant attention developed 1–5 . At mm‐wave frequency band, this can provide larger channel bandwidth (defined up to 400 MHz) and higher spectral efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…To obtain contiguous spectrum availability, 5G millimeter-wave (mm-wave) frequency band also has received significant attention developed. [1][2][3][4][5] At mm-wave frequency band, this can provide larger channel bandwidth (defined up to 400 MHz) and higher spectral efficiency. It is particularly notorious that the 5G new radio (NR) FR2 standard N257 band (26.5 to 29.5 GHz) and N258 band (24.25 to 27.5 GHz) have been specified.…”

mentioning

confidence: 99%

A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method

Zhao

Zhu

Xia

et al. 2023

Circuit Theory & Apps

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SummaryThis paper presents a broadband monolithic millimeter‐wave integrated circuit GaN power amplifier (PA) with arbitrary two‐port complex‐impedance matching method. The proposed matching topology has been applied to interstage matching network design by modifying traditional coupling matrix and synthesizing a desired network. The optimum load traction technique is introduced to provide some more suitable Zopts. After continuous‐wave test, the three‐stage MMIC PA achieves a peak PAE of 39.1% with a 34.9 dBm output power from 23 to 29.5 GHz and the measured S21 is 32.5 dB with a ±2.5 dB gain variation. When driven by a 400 MHz OFDM modulation signal with a PAPR of 8.5 dB, the measured ACPR is improved to −40.6/−40.7 dBc with DPD. In this case, the PA achieves an average PAE of 11.7% and a 26.7 dBm average output power.

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“…Therefore, this band has gradually attracted attention and development. [1][2][3][4][5] However, in the MMW band, the spacing between chips is tight, and more heat loss needs to be overcome. Meanwhile, more high-order modulation signals will be used, accompanied by greater link losses.…”

Section: Introductionmentioning

confidence: 99%

“…Compared to Sub‐6 GHz frequency band, MMW has unique advantages such as large bandwidth and low low‐latency, which can meet the requirements of future wireless communication for system capacity, transmission rate, and differentiated applications. Therefore, this band has gradually attracted attention and development 1–5 . However, in the MMW band, the spacing between chips is tight, and more heat loss needs to be overcome.…”

Section: Introductionmentioning

confidence: 99%

A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network

Li,

Zhu,

Liu

et al. 2023

Circuit Theory & Apps

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SummaryThis paper presents Doherty power amplifier (DPA) based on gallium nitride (GaN) technology, incorporating a parallel grounded network with series RC elements in front of the carrier and peaking amplifiers to enhance circuit stability. In comparison to the traditional series network with parallel RC structure, this configuration effectively reduces the sensitivity of the stability factor K to the capacitance value within the stability network. Consequently, it mitigates the impact on various performance indicators such as gain and drain efficiency, addressing the issue of measurement performance deviation caused by inaccurate capacitance models in the simulation files, which is particularly crucial for DPA. As a result, the circuit exhibits improved consistency in design and processing. With full band stability, the DPA achieves a saturation output power of approximately 29.8 dBm at 28 GHz, a saturation efficiency of 38.2%, and a 6‐dB back‐off efficiency of 29.6%.

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Power Amplifiers With Frequency-Selective Matching Networks

Cited by 16 publications

References 26 publications

Integrated Filter–Amplifiers: A Comprehensive Review

Integrated Filter–Amplifiers: A Comprehensive Review

A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method

A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network

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